Invention Grant
US09543311B2 Vertical memory cell with non-self-aligned floating drain-source implant
有权
具有非自对准浮动漏源植入物的垂直存储单元
- Patent Title: Vertical memory cell with non-self-aligned floating drain-source implant
- Patent Title (中): 具有非自对准浮动漏源植入物的垂直存储单元
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Application No.: US14625356Application Date: 2015-02-18
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Publication No.: US09543311B2Publication Date: 2017-01-10
- Inventor: Marc Mantelli , Stephan Niel , Arnaud Regnier , Francesco La Rosa , Julien Delalleau
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee Address: FR Rousset
- Agency: Seed IP Law Group LLP
- Priority: FR1451297 20140218
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/423 ; H01L29/788 ; G11C16/14 ; H01L21/28 ; H01L21/306 ; H01L21/308 ; H01L21/266 ; H01L21/3213
Abstract:
Various embodiments provide a memory cell that includes a vertical selection gate, a floating gate extending above the substrate, wherein the floating gate also extends above a portion of the vertical selection gate, over a non-zero overlap distance, the memory cell comprising a doped region implanted at the intersection of a vertical channel region extending opposite the selection gate and a horizontal channel region extending opposite the floating gate.
Public/Granted literature
- US20150236031A1 VERTICAL MEMORY CELL WITH NON-SELF-ALIGNED FLOATING DRAIN-SOURCE IMPLANT Public/Granted day:2015-08-20
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