发明授权
- 专利标题： Semiconductor devices including a dummy gate structure on a fin
- 专利标题（中）： 半导体器件包括翅片上的虚拟栅极结构
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申请号： US15047181申请日： 2016-02-18
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公开(公告)号： US09548309B2公开(公告)日： 2017-01-17
- 发明人: Sang-Jine Park , Kee-Sang Kwon , Do-Hyoung Kim , Bo-Un Yoon , Keun-Hee Bai , Kwang-Yong Yang , Kyoung-Hwan Yeo , Yong-Ho Jeon
- 申请人： Sang-Jine Park , Kee-Sang Kwon , Do-Hyoung Kim , Bo-Un Yoon , Keun-Hee Bai , Kwang-Yong Yang , Kyoung-Hwan Yeo , Yong-Ho Jeon
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel, P.A.
- 优先权： KR10-2014-0054924 20140508
- 主分类号： H01L27/11
- IPC分类号： H01L27/11 ; H01L29/06 ; H01L29/08 ; H01L27/088 ; H01L21/8234 ; H01L27/092 ; H01L29/16 ; H01L29/161 ; H01L29/165 ; H01L29/78
摘要：
Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.
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