Method of manufacturing semiconductor device and semiconductor device

Invention Grant

US09564540B2 Method of manufacturing semiconductor device and semiconductor device 有权

Title translation: 制造半导体器件和半导体器件的方法

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Patent Title: Method of manufacturing semiconductor device and semiconductor device
Patent Title (中): 制造半导体器件和半导体器件的方法
Application No.: US14803037

Application Date: 2015-07-18
Publication No.: US09564540B2

Publication Date: 2017-02-07
Inventor: Hiroshi Uozaki , Yasuhiro Takeda , Keiichi Maekawa , Takumi Hasegawa , Kota Funayama , Yoshiki Maruyama , Kazutoshi Shiba , Shuichi Kudo
Applicant: Renesas Electronics Corporation
Applicant Address: JP Tokyo
Assignee: Renesas Electronics Corporation
Current Assignee: Renesas Electronics Corporation
Current Assignee Address: JP Tokyo
Agency: Shapiro, Gabor and Rosenberger, PLLC
Priority: JP2012-253249 20121119
Main IPC: H01L21/3205
IPC: H01L21/3205 ; H01L29/788 ; H01L27/11 ; H01L29/40 ; H01L21/28 ; H01L27/105 ; H01L27/115 ; H01L29/423 ; H01L29/792

Method of manufacturing semiconductor device and semiconductor device

Abstract:

An object is to provide a semiconductor device having improved reliability by preventing, in forming a nonvolatile memory and MOSFETS on the same substrate, an increase in the size of grains in a gate electrode. The object can be achieved by forming the control gate electrode of the nonvolatile memory and the gate electrodes of the other MOSFETs from films of the same layer, respectively, and configuring each of the control gate electrode and the gate electrodes from a stack of two polysilicon film layers.

Abstract(Chinese):

本发明的目的是通过在同一基板上形成非易失性存储器和MOSFETS来防止栅极电极中的晶粒尺寸的增加来提供具有改善的可靠性的半导体器件。可以通过分别从相同层的膜形成非易失性存储器的控制栅电极和其它MOSFET的栅电极并且从两个多晶硅的堆叠中配置每个控制栅电极和栅电极来实现该目的电影层。

Public/Granted literature

US20150333139A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2015-11-19

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）