公开(公告)号：US09564540B2

公开(公告)日：2017-02-07

申请号：US14803037

申请日：2015-07-18

Applicant: Renesas Electronics Corporation

Inventor： Hiroshi Uozaki ,  Yasuhiro Takeda ,  Keiichi Maekawa ,  Takumi Hasegawa ,  Kota Funayama ,  Yoshiki Maruyama ,  Kazutoshi Shiba ,  Shuichi Kudo

IPC: H01L21/3205 ,  H01L29/788 ,  H01L27/11 ,  H01L29/40 ,  H01L21/28 ,  H01L27/105 ,  H01L27/115 ,  H01L29/423 ,  H01L29/792

CPC classification number: H01L29/788 ,  H01L21/28282 ,  H01L27/105 ,  H01L27/1104 ,  H01L27/11573 ,  H01L29/401 ,  H01L29/42344 ,  H01L29/792

Abstract: An object is to provide a semiconductor device having improved reliability by preventing, in forming a nonvolatile memory and MOSFETS on the same substrate, an increase in the size of grains in a gate electrode. The object can be achieved by forming the control gate electrode of the nonvolatile memory and the gate electrodes of the other MOSFETs from films of the same layer, respectively, and configuring each of the control gate electrode and the gate electrodes from a stack of two polysilicon film layers.

Abstract translation: 本发明的目的是通过在同一基板上形成非易失性存储器和MOSFETS来防止栅极电极中的晶粒尺寸的增加来提供具有改善的可靠性的半导体器件。 可以通过分别从相同层的膜形成非易失性存储器的控制栅电极和其它MOSFET的栅电极并且从两个多晶硅的堆叠中配置每个控制栅电极和栅电极来实现该目的 电影层。

公开(公告)号：US09093546B2

公开(公告)日：2015-07-28

申请号：US14066740

申请日：2013-10-30

Applicant: Renesas Electronics Corporation

Inventor： Hiroshi Uozaki ,  Yasuhiro Takeda ,  Keiichi Maekawa ,  Takumi Hasegawa ,  Kota Funayama ,  Yoshiki Maruyama ,  Kazutoshi Shiba ,  Shuichi Kudo

IPC: H01L29/788 ,  H01L27/11 ,  H01L21/28 ,  H01L27/105 ,  H01L27/115 ,  H01L29/423 ,  H01L29/792

CPC classification number: H01L29/788 ,  H01L21/28282 ,  H01L27/105 ,  H01L27/1104 ,  H01L27/11573 ,  H01L29/401 ,  H01L29/42344 ,  H01L29/792

Abstract: An object is to provide a semiconductor device having improved reliability by preventing, in forming a nonvolatile memory and MOSFETS on the same substrate, an increase in the size of grains in a gate electrode. The object can be achieved by forming the control gate electrode of the nonvolatile memory and the gate electrodes of the other MOSFETs from films of the same layer, respectively, and configuring each of the control gate electrode and the gate electrodes from a stack of two polysilicon film layers.

Abstract translation: 本发明的目的是通过在同一基板上形成非易失性存储器和MOSFETS来防止栅极电极中的晶粒尺寸的增加来提供具有改善的可靠性的半导体器件。 可以通过分别从相同层的膜形成非易失性存储器的控制栅电极和其它MOSFET的栅电极并且从两个多晶硅的堆叠中配置每个控制栅电极和栅电极来实现该目的 电影层。

公开(公告)号：US20150333139A1

公开(公告)日：2015-11-19

申请号：US14803037

申请日：2015-07-18

Applicant: Renesas Electronics Corporation

Inventor： Hiroshi Uozaki ,  Yasuhiro Takeda ,  Keiichi Maekawa ,  Takumi Hasegawa ,  Kota Funayama ,  Yoshiki Maruyama ,  Kazutoshi Shiba ,  Shuichi Kudo

IPC: H01L29/423 ,  H01L29/40

CPC classification number: H01L29/788 ,  H01L21/28282 ,  H01L27/105 ,  H01L27/1104 ,  H01L27/11573 ,  H01L29/401 ,  H01L29/42344 ,  H01L29/792

Abstract: An object is to provide a semiconductor device having improved reliability by preventing, in forming a nonvolatile memory and MOSFETS on the same substrate, an increase in the size of grains in a gate electrode. The object can be achieved by forming the control gate electrode of the nonvolatile memory and the gate electrodes of the other MOSFETs from films of the same layer, respectively, and configuring each of the control gate electrode and the gate electrodes from a stack of two polysilicon film layers.

Abstract translation: 本发明的目的是通过在同一基板上形成非易失性存储器和MOSFETS来防止栅极电极中的晶粒尺寸的增加来提供具有改善的可靠性的半导体器件。 可以通过分别从相同层的膜形成非易失性存储器的控制栅电极和其它MOSFET的栅电极并且从两个多晶硅的堆叠中配置每个控制栅电极和栅电极来实现该目的 电影层。

公开(公告)号：US20140138758A1

公开(公告)日：2014-05-22

申请号：US14066740

申请日：2013-10-30

Applicant: Renesas Electronics Corporation

Inventor： Hiroshi Uozaki ,  Yasuhiro Takeda ,  Keiichi Maekawa ,  Takumi Hasegawa ,  Kota Funayama ,  Yoshiki Maruyama ,  Kazutoshi Shiba ,  Shuichi Kudo

IPC: H01L29/423 ,  H01L29/788 ,  H01L27/11 ,  H01L21/28

CPC classification number: H01L29/788 ,  H01L21/28282 ,  H01L27/105 ,  H01L27/1104 ,  H01L27/11573 ,  H01L29/401 ,  H01L29/42344 ,  H01L29/792

Abstract: An object is to provide a semiconductor device having improved reliability by preventing, in forming a nonvolatile memory and MOSFETS on the same substrate, an increase in the size of grains in a gate electrode. The object can be achieved by forming the control gate electrode of the nonvolatile memory and the gate electrodes of the other MOSFETs from films of the same layer, respectively, and configuring each of the control gate electrode and the gate electrodes from a stack of two polysilicon film layers.

Abstract translation: 本发明的目的是通过在同一基板上形成非易失性存储器和MOSFETS来防止栅极电极中的晶粒尺寸的增加来提供具有改善的可靠性的半导体器件。 可以通过分别从相同层的膜形成非易失性存储器的控制栅电极和其它MOSFET的栅电极并且从两个多晶硅的堆叠中配置每个控制栅电极和栅电极来实现该目的 电影层。