发明授权
- 专利标题： Diode formed of PMOSFET and schottky diodes
- 专利标题（中）： 二极管由PMOSFET和肖特基二极管组成
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申请号： US13604299申请日： 2012-09-05
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公开(公告)号： US09576949B2公开(公告)日： 2017-02-21
- 发明人: Jam-Wem Lee , Wan-Yen Lin , Ming-Hsiang Song , Cheng-Hsiung Kuo , Yue-Der Chih
- 申请人： Jam-Wem Lee , Wan-Yen Lin , Ming-Hsiang Song , Cheng-Hsiung Kuo , Yue-Der Chih
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L27/07 ; H01L27/02 ; H01L29/872 ; H01L29/06 ; H02M3/07
摘要：
A P-type Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) includes a gate, a first source/drain region connected to the gate, and a second source/drain region on an opposite side of the gate than the first source/drain region. A first Schottky diode includes a first anode connected to the first source/drain region, and a first cathode connected to a body of the PMOSFET. A second Schottky diode includes a second anode connected to the second source/drain region, and a second cathode connected to the body of the PMOSFET.
公开/授权文献
- US20140062580A1 Diode Formed of PMOSFET and Schottky Diodes 公开/授权日：2014-03-06
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