Invention Grant
- Patent Title: Semiconductor device and process of making the same
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14724522Application Date: 2015-05-28
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Publication No.: US09577027B2Publication Date: 2017-02-21
- Inventor: Teck-Chong Lee , Chien-Hua Chen , Yung-Shun Chang , Pao-Nan Lee
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaosiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaosiung
- Agency: Foley & Lardner LLP
- Agent Cliff Z. Liu
- Priority: CN201410239582 20140530
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L49/02 ; H01L27/01 ; H01L21/768 ; H01L21/48 ; H05K1/03 ; H05K1/18 ; H01L23/498
Abstract:
A semiconductor device includes a substrate, a seed layer, a first patterned metal layer, a dielectric layer and a second metal layer. The seed layer is disposed on a surface of the substrate. The first patterned metal layer is disposed on the seed layer and has a first thickness. The first patterned metal layer includes a first part and a second part. The dielectric layer is disposed on the first part of the first patterned metal layer. The second metal layer is disposed on the dielectric layer and has a second thickness, where the first thickness is greater than the second thickness. The first part of the first patterned metal layer, the dielectric layer and the second metal layer form a capacitor. The first part of the first patterned metal layer is a lower electrode of the capacitor, and the second part of the first patterned metal layer is an inductor.
Public/Granted literature
- US20150349048A1 SEMICONDUCTOR DEVICE AND PROCESS OF MAKING THE SAME Public/Granted day:2015-12-03
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