发明授权
US09583343B2 Method of forming non-continuous line pattern and non-continuous line pattern structure
有权
形成非连续线条图案和非连续线条图案结构的方法
- 专利标题： Method of forming non-continuous line pattern and non-continuous line pattern structure
- 专利标题（中）： 形成非连续线条图案和非连续线条图案结构的方法
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申请号： US14753019申请日： 2015-06-29
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公开(公告)号： US09583343B2公开(公告)日： 2017-02-28
- 发明人: Yu-Te Chen , En-Chiuan Liou , Chia-Hsun Tseng , Shin-Feng Su , Yu-Ting Hung , Meng-Lin Tsai
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 优先权： CN201510258199 20150520
- 主分类号： H01L23/528
- IPC分类号： H01L23/528 ; H01L21/027 ; H01L21/311
摘要：
A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.
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