公开(公告)号：US09548216B1

公开(公告)日：2017-01-17

申请号：US14809270

申请日：2015-07-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Te Chen ,  Chia-Hsun Tseng ,  En-Chiuan Liou ,  Chiung-Lin Hsu ,  Meng-Lin Tsai ,  Jan-Fu Yang ,  Yu-Ting Hung ,  Shin-Feng Su

IPC: H01L21/76 ,  H01L21/321 ,  H01L21/225 ,  H01L21/3205 ,  H01L21/3105

CPC classification number: H01L21/2253 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823821

Abstract: A method of adjusting channel widths of semiconductive devices includes providing a substrate divided into a first region and a second region, wherein the substrate comprises numerous fins. A first implantation process is performed on the fins within the first region. Then, a second implantation process is performed on the fins within the second region, wherein the first implantation process and the second implantation process are different from each other in at least one of the conditions comprising dopant species, dopant dosage or implantation energy. After that, part of the fins within the first region and the second region are removed simultaneously to form a plurality of first recesses within the first region and a plurality of second recesses within the second region. Finally, a first epitaxial layer and a second epitaxial layer are formed to fill up each first recess and each second recess, respectively.

Abstract translation: 调整半导体器件的沟道宽度的方法包括提供分成第一区域和第二区域的衬底，其中衬底包括多个鳍片。 在第一区域内的翅片上执行第一注入工艺。 然后，对第二区域内的翅片执行第二注入工艺，其中第一注入工艺和第二注入工艺在包括掺杂剂种类，掺杂剂剂量或注入能量的至少一个条件中彼此不同。 之后，同时去除第一区域和第二区域内的部分散热片，以在第一区域内形成多个第一凹槽，在第二区域内形成多个第二凹槽。 最后，形成第一外延层和第二外延层以分别填充每个第一凹槽和每个第二凹槽。

公开(公告)号：US20170025286A1

公开(公告)日：2017-01-26

申请号：US14809270

申请日：2015-07-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Te Chen ,  Chia-Hsun Tseng ,  En-Chiuan Liou ,  Chiung-Lin Hsu ,  Meng-Lin Tsai ,  Jan-Fu Yang ,  Yu-Ting Hung ,  Shin-Feng Su

IPC: H01L21/321 ,  H01L21/3205 ,  H01L21/3105 ,  H01L21/225

CPC classification number: H01L21/2253 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823821

Abstract: A method of adjusting channel widths of semiconductive devices includes providing a substrate divided into a first region and a second region, wherein the substrate comprises numerous fins. A first implantation process is performed on the fins within the first region. Then, a second implantation process is performed on the fins within the second region, wherein the first implantation process and the second implantation process are different from each other in at least one of the conditions comprising dopant species, dopant dosage or implantation energy. After that, part of the fins within the first region and the second region are removed simultaneously to form a plurality of first recesses within the first region and a plurality of second recesses within the second region. Finally, a first epitaxial layer and a second epitaxial layer are formed to fill up each first recess and each second recess, respectively.

Abstract translation: 调整半导体器件的沟道宽度的方法包括提供分成第一区域和第二区域的衬底，其中衬底包括多个鳍片。 在第一区域内的翅片上执行第一注入工艺。 然后，对第二区域内的翅片执行第二注入工艺，其中第一注入工艺和第二注入工艺在包括掺杂剂种类，掺杂剂剂量或注入能量的至少一个条件中彼此不同。 之后，同时去除第一区域和第二区域内的部分散热片，以在第一区域内形成多个第一凹槽，在第二区域内形成多个第二凹槽。 最后，形成第一外延层和第二外延层以分别填充每个第一凹槽和每个第二凹槽。

公开(公告)号：US09711358B2

公开(公告)日：2017-07-18

申请号：US15399715

申请日：2017-01-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Te Chen ,  En-Chiuan Liou ,  Chia-Hsun Tseng ,  Shin-Feng Su ,  Yu-Ting Hung ,  Meng-Lin Tsai

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/768

CPC classification number: H01L21/0337 ,  H01L21/0271 ,  H01L21/0275 ,  H01L21/0332 ,  H01L21/0334 ,  H01L21/31127 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816

Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.

公开(公告)号：US20170117149A1

公开(公告)日：2017-04-27

申请号：US15399715

申请日：2017-01-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Te Chen ,  En-Chiuan Liou ,  Chia-Hsun Tseng ,  Shin-Feng Su ,  Yu-Ting Hung ,  Meng-Lin Tsai

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/768 ,  H01L21/027

CPC classification number: H01L21/0337 ,  H01L21/0271 ,  H01L21/0275 ,  H01L21/0332 ,  H01L21/0334 ,  H01L21/31127 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816

Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.

公开(公告)号：US09583343B2

公开(公告)日：2017-02-28

申请号：US14753019

申请日：2015-06-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Te Chen ,  En-Chiuan Liou ,  Chia-Hsun Tseng ,  Shin-Feng Su ,  Yu-Ting Hung ,  Meng-Lin Tsai

IPC: H01L23/528 ,  H01L21/027 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/0271 ,  H01L21/0275 ,  H01L21/0332 ,  H01L21/0334 ,  H01L21/31127 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816

Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.

Abstract translation: 形成非连续线图案的方法包括在基底上形成DSA材料层，进行DSA材料层的相分离以形成包括多个第一聚合物结构和交替布置的第二聚合物结构的有序周期性图案， 形成第一掩模以覆盖有序周期性图案的第一部分，执行第一蚀刻工艺以去除由第一掩模暴露的第一聚合物结构的一部分，去除第一掩模，形成第二掩模以覆盖第二掩模的第二部分 所述有序周期性图案间隔到所述有序周期性图案的第一部分，执行第二蚀刻工艺以去除由所述第二掩模暴露的所述第二聚合物结构的一部分，以及去除所述第二掩模。 剩余的第一聚合物结构和剩余的第二聚合物结构彼此不连接。

公开(公告)号：US20160343567A1

公开(公告)日：2016-11-24

申请号：US14753019

申请日：2015-06-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Te Chen ,  En-Chiuan Liou ,  Chia-Hsun Tseng ,  Shin-Feng Su ,  Yu-Ting Hung ,  Meng-Lin Tsai

IPC: H01L21/027 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/0271 ,  H01L21/0275 ,  H01L21/0332 ,  H01L21/0334 ,  H01L21/31127 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816

Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.

Abstract translation: 形成非连续线图案的方法包括在基底上形成DSA材料层，进行DSA材料层的相分离以形成包括多个第一聚合物结构和交替布置的第二聚合物结构的有序周期性图案， 形成第一掩模以覆盖有序周期性图案的第一部分，执行第一蚀刻工艺以去除由第一掩模暴露的第一聚合物结构的一部分，去除第一掩模，形成第二掩模以覆盖第二掩模的第二部分 所述有序周期性图案间隔到所述有序周期性图案的第一部分，执行第二蚀刻工艺以去除由所述第二掩模暴露的所述第二聚合物结构的一部分，以及去除所述第二掩模。 剩余的第一聚合物结构和剩余的第二聚合物结构彼此不连接。