Invention Grant
US09590088B2 Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer
有权
具有氨分子束外延生长的p型氮化镓作为电流阻挡层的电流孔径垂直电子晶体管
- Patent Title: Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer
- Patent Title (中): 具有氨分子束外延生长的p型氮化镓作为电流阻挡层的电流孔径垂直电子晶体管
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Application No.: US14566443Application Date: 2014-12-10
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Publication No.: US09590088B2Publication Date: 2017-03-07
- Inventor: Srabanti Chowdhury , Ramya Yeluri , Christophe Hurni , Umesh K. Mishra , Ilan Ben-Yaacov
- Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/66 ; H01L29/861 ; H01L29/06 ; H01L29/20 ; H01L29/201 ; H01L29/205 ; H01L29/417
Abstract:
A current aperture vertical electron transistor (CAVET) with ammonia (NH3) based molecular beam epitaxy (MBE) grown p-type Gallium Nitride (p-GaN) as a current blocking layer (CBL). Specifically, the CAVET features an active buried Magnesium (Mg) doped GaN layer for current blocking purposes. This structure is very advantageous for high power switching applications and for any device that requires a buried active p-GaN layer for its functionality.
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