公开(公告)号：US20130099277A1

公开(公告)日：2013-04-25

申请号：US13660782

申请日：2012-10-25

Applicant: The Regents of the University of California

Inventor： James S. Speck ,  Evelyn L. Hu ,  Claude C.A. Weisbuch ,  Yong Seok Choi ,  Gregor Koblmuller ,  Michael Iza ,  Christophe Hurni

IPC: H01L33/02 ,  H01L21/306 ,  H01L29/20

CPC classification number: H01L21/30621 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079

Abstract: A method of selective dry etching of N-face (Al,In,Ga)N heterostructures through the incorporation of an etch-stop layer into the structure, and a controlled, highly selective, etch process. Specifically, the method includes: (1) the incorporation of an easily formed, compatible etch-stop layer in the growth of the device structure, (2) the use of a laser-lift off or similar process to decouple the active layer from the original growth substrate, and (3) the achievement of etch selectivity higher than 14:1 on N-face (Al,In,Ga)N.

Abstract translation: 通过将蚀刻停止层结合到结构中以及受控的高选择性蚀刻工艺，选择性地干蚀刻N面（Al，In，Ga）N异质结构的方法。 具体地说，该方法包括：（1）在器件结构的生长中结合容易形成的兼容的蚀刻停止层，（2）使用激光剥离或类似工艺来将活性层与 原始生长衬底，和（3）在N面（Al，In，Ga）N上实现高于14：1的蚀刻选择性。

公开(公告)号：US20150137137A1

公开(公告)日：2015-05-21

申请号：US14566443

申请日：2014-12-10

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Srabanti Chowdhury ,  Ramya Yeluri ,  Christophe Hurni ,  Umesh K. Mishra ,  Ilan Ben-Yaacov

IPC: H01L29/778 ,  H01L29/201 ,  H01L29/205 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L29/0646 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/41766 ,  H01L29/66204 ,  H01L29/66462 ,  H01L29/7788 ,  H01L29/861

Abstract: A current aperture vertical electron transistor (CAVET) with ammonia (NH3) based molecular beam epitaxy (MBE) grown p-type Gallium Nitride (p-GaN) as a current blocking layer (CBL). Specifically, the CAVET features an active buried Magnesium (Mg) doped GaN layer for current blocking purposes. This structure is very advantageous for high power switching applications and for any device that requires a buried active p-GaN layer for its functionality.

Abstract translation: 具有基于氨（NH3）的分子束外延（MBE）的电流孔径垂直电子晶体管（CAVET）生长的p型氮化镓（p-GaN）作为电流阻挡层（CBL）。 具体来说，CAVET具有用于电流阻塞目的的有源掩埋的镁（Mg）掺杂的GaN层。 这种结构对于大功率开关应用以及需要掩埋有源p-GaN层用于其功能的任何器件是非常有利的。

公开(公告)号：US09590088B2

公开(公告)日：2017-03-07

申请号：US14566443

申请日：2014-12-10

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Srabanti Chowdhury ,  Ramya Yeluri ,  Christophe Hurni ,  Umesh K. Mishra ,  Ilan Ben-Yaacov

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/861 ,  H01L29/06 ,  H01L29/20 ,  H01L29/201 ,  H01L29/205 ,  H01L29/417

CPC classification number: H01L29/7787 ,  H01L29/0646 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/41766 ,  H01L29/66204 ,  H01L29/66462 ,  H01L29/7788 ,  H01L29/861

Abstract: A current aperture vertical electron transistor (CAVET) with ammonia (NH3) based molecular beam epitaxy (MBE) grown p-type Gallium Nitride (p-GaN) as a current blocking layer (CBL). Specifically, the CAVET features an active buried Magnesium (Mg) doped GaN layer for current blocking purposes. This structure is very advantageous for high power switching applications and for any device that requires a buried active p-GaN layer for its functionality.

Abstract translation: 具有基于氨（NH3）的分子束外延（MBE）的电流孔径垂直电子晶体管（CAVET）生长的p型氮化镓（p-GaN）作为电流阻挡层（CBL）。 具体来说，CAVET具有用于电流阻塞目的的有源掩埋的镁（Mg）掺杂的GaN层。 这种结构对于大功率开关应用以及需要掩埋有源p-GaN层用于其功能的任何器件是非常有利的。