Invention Grant
US09593008B2 MEMS sensor including an over-travel stop and method of manufacture
有权
MEMS传感器包括超行程挡块和制造方法
- Patent Title: MEMS sensor including an over-travel stop and method of manufacture
- Patent Title (中): MEMS传感器包括超行程挡块和制造方法
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Application No.: US14501792Application Date: 2014-09-30
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Publication No.: US09593008B2Publication Date: 2017-03-14
- Inventor: Matthew Julian Thompson , Michael Dueweke , Ilya Gurin , Joseph Seeger
- Applicant: InvenSense, Inc.
- Applicant Address: US CA San Jose
- Assignee: InvenSense, Inc.
- Current Assignee: InvenSense, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H02N1/04
- IPC: H02N1/04 ; B81B3/00 ; H02N11/00 ; B81B7/02
Abstract:
A MEMS sensor is disclosed. The MEMS sensor includes a MEMS structure and a substrate coupled to the MEMS structure. The substrate includes a layer of metal and a layer of dielectric material. The MEMS structure moves in response to an excitation. A first over-travel stop is formed on the substrate at a first distance from the MEMS structure. A second over-travel stop on the substrate at a second distance from the MEMS structure. At least one electrode on the substrate at a third distance from the MEMS structure. The first, second and third distances are all different.
Public/Granted literature
- US20160094156A1 MEMS SENSOR INCLUDING AN OVER-TRAVEL STOP AND METHOD OF MANUFACTURE Public/Granted day:2016-03-31
Information query
