Cavity pressure modification using local heating with a laser

    公开(公告)号:US09878902B2

    公开(公告)日:2018-01-30

    申请号:US15383755

    申请日:2016-12-19

    Abstract: A method and system for changing a pressure within at least one enclosure in a MEMS device are disclosed. In a first aspect, the method comprises applying a laser through one of the at least two substrates onto a material which changes the pressure within at least one enclosure when exposed to the laser, wherein the at least one enclosure is formed by the at least two substrates. In a second aspect, the system comprises a MEMS device that includes a first substrate, a second substrate bonded to the first substrate, wherein at least one enclosure is located between the first and the second substrates, a metal layer within one of the first substrate and the second substrate, and a material vertically oriented over the metal layer, wherein when the material is heated the material changes a pressure within the at least one enclosure.

    MEMS sensor including an over-travel stop and method of manufacture
    2.
    发明授权
    MEMS sensor including an over-travel stop and method of manufacture 有权
    MEMS传感器包括超行程挡块和制造方法

    公开(公告)号:US09593008B2

    公开(公告)日:2017-03-14

    申请号:US14501792

    申请日:2014-09-30

    CPC classification number: B81B3/0051 B81B7/02 B81B2203/0118 H02N11/002

    Abstract: A MEMS sensor is disclosed. The MEMS sensor includes a MEMS structure and a substrate coupled to the MEMS structure. The substrate includes a layer of metal and a layer of dielectric material. The MEMS structure moves in response to an excitation. A first over-travel stop is formed on the substrate at a first distance from the MEMS structure. A second over-travel stop on the substrate at a second distance from the MEMS structure. At least one electrode on the substrate at a third distance from the MEMS structure. The first, second and third distances are all different.

    Abstract translation: 公开了一种MEMS传感器。 MEMS传感器包括耦合到MEMS结构的MEMS结构和衬底。 衬底包括金属层和电介质材料层。 MEMS结构响应于激发而移动。 在距离MEMS结构的第一距离处,在基板上形成第一超行程挡块。 在距离MEMS结构第二距离的基板上的第二超行程停止。 在距离MEMS结构三分之一距离的衬底上的至少一个电极。 第一,第二和第三距离都是不同的。

    Cavity pressure modification using local heating with a laser
    3.
    发明授权
    Cavity pressure modification using local heating with a laser 有权
    使用局部加热激光进行腔压力修改

    公开(公告)号:US09556019B2

    公开(公告)日:2017-01-31

    申请号:US14705630

    申请日:2015-05-06

    Abstract: A method and system for changing a pressure within at least one enclosure in a MEMS device are disclosed. In a first aspect, the method comprises applying a laser through one of the at least two substrates onto a material which changes the pressure within at least one enclosure when exposed to the laser, wherein the at least one enclosure is formed by the at least two substrates. In a second aspect, the system comprises a MEMS device that includes a first substrate, a second substrate bonded to the first substrate, wherein at least one enclosure is located between the first and the second substrates, a metal layer within one of the first substrate and the second substrate, and a material vertically oriented over the metal layer, wherein when the material is heated the material changes a pressure within the at least one enclosure.

    Abstract translation: 公开了一种用于改变MEMS装置中的至少一个外壳内的压力的方法和系统。 在第一方面,所述方法包括将激光通过所述至少两个基板之一施加到当暴露于所述激光器时改变至少一个外壳内的压力的材料,其中所述至少一个外壳由所述至少两个基板形成 底物。 在第二方面,该系统包括MEMS器件,其包括第一衬底,与第一衬底结合的第二衬底,其中至少一个外壳位于第一和第二衬底之间,第一衬底之一内的金属层 和第二基底以及垂直取向在金属层上的材料,其中当材料被加热时,材料改变至少一个外壳内的压力。

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