Invention Grant
- Patent Title: High power radio frequency (RF) in-line wafer testing
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Application No.: US13733507Application Date: 2013-01-03
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Publication No.: US09599657B2Publication Date: 2017-03-21
- Inventor: Hanyi Ding , John Ferrario , Barton E. Green , Stephen Moss , Mustapha Slamani
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent Michael LeStrange; Andrew M. Calderon
- Main IPC: G01R31/20
- IPC: G01R31/20 ; G01R31/26 ; G01R1/067

Abstract:
Approaches for performing in line wafer testing are provided. An approach includes a method that includes generating a radio frequency (RF) test signal, and applying the RF test signal to a device under test (DUT) in a wafer using a buckling beam probe set with a predefined pitch. The method also includes detecting an output RF signal from the DUT in response to the applying the RF test signal to the DUT, and sensing at least one frequency component of the detected output RF signal.
Public/Granted literature
- US20140184258A1 HIGH POWER RADIO FREQUENCY (RF) IN-LINE WAFER TESTING Public/Granted day:2014-07-03
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