In an embodiment a radical inhibitor is included within a photoresist in order to reduce the amount of cross-linking that occurs during subsequent processing, such as an ion implantation process, that would otherwise form a crust within the photoresist. The crust can be removed in a separate process, such as a dry etch with an oxidative or reductive etchant. Alternatively, the crust may be treated to make it more hydrophyilic such that it can be removed simultaneously with the photoresist.