公开(公告)号：US20240170063A1

公开(公告)日：2024-05-23

申请号：US18301440

申请日：2023-04-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Dian-Sheng Yu ,  Chien-Chih Chen ,  Jhon Jhy Liaw

IPC: G11C15/04 ,  H10B10/00

CPC classification number: G11C15/04 ,  H10B10/12

Abstract: A Content Addressable Memory (CAM) array includes a first and a second cell structure sharing a cell boundary. The first cell structure includes a first storage circuit and a first comparator circuit, the first comparator circuit includes a first transistor having a gate, a drain, and a source. The second cell structure includes a second storage circuit and a second comparator circuit, the second comparator circuit includes a second transistor having a gate, a drain, and a source. The CAM array further includes a first shared source contact landing on the source of the first transistor and the source of the second transistor. The first shared source contact connects the source of the first transistor to the source of the second transistor. And the first shared source contact extends across the shared cell boundary from the first cell structure to the second cell structure.

公开(公告)号：US11062905B2

公开(公告)日：2021-07-13

申请号：US16672705

申请日：2019-11-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chien-Chih Chen ,  Chien-Wei Wang

IPC: G03F7/09 ,  H01L21/033 ,  H01L21/027

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming a metal-containing layer on a substrate, the metal-containing layer including a plurality of conjugates of metal-hydroxyl groups; treating the metal-containing layer at temperature that is lower than about 300° C. thereby causing a condensation reaction involving the plurality of conjugates of metal-hydroxyl groups; forming a patterned photosensitive layer on the treated metal-containing layer; and developing the patterned photosensitive layer so as to allow at least about 6% decrease of optimum exposure (Eop).

公开(公告)号：US20200066524A1

公开(公告)日：2020-02-27

申请号：US16672705

申请日：2019-11-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chien-Chih Chen ,  ChienWei Wang

IPC: H01L21/033 ,  G03F7/09 ,  H01L21/027

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming a metal-containing layer on a substrate, the metal-containing layer including a plurality of conjugates of metal-hydroxyl groups; treating the metal-containing layer at temperature that is lower than about 300° C. thereby causing a condensation reaction involving the plurality of conjugates of metal-hydroxyl groups; forming a patterned photosensitive layer on the treated metal-containing layer; and developing the patterned photosensitive layer so as to allow at least about 6% decrease of optimum exposure (Eop).

公开(公告)号：US09772559B2

公开(公告)日：2017-09-26

申请号：US14714887

申请日：2015-05-18

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ya-Ling Cheng ,  Ching-Yu Chang ,  Chien-Chih Chen

IPC: G03F7/38 ,  G03F7/42 ,  G03F7/038 ,  G03F7/40

CPC classification number: G03F7/422 ,  G03F7/038 ,  G03F7/38 ,  G03F7/40

Abstract: Methods for performing a photolithographic process are disclosed. The methods facilitate the removal of photosensitive from a wafer after the photosensitive has been used as an etch mask. The photosensitive may be a negative tone photosensitive that undergoes a cross-linking process on exposure to electromagnetic energy. By limiting the cross-linking through a reduced post-exposure bake temperature and/or through reduced cross-linker loading, the photoresist, or at least a portion thereof, may have a reduced solvent strip resistance. Because of the reduced solvent strip resistance, a portion of the photosensitive may be removed using a solvent strip. After the solvent strip, a dry etch may be performed to remove remaining portions of the photoresist.

公开(公告)号：US09543147B2

公开(公告)日：2017-01-10

申请号：US14849154

申请日：2015-09-09

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chen-Yu Liu ,  Ching-Yu Chang ,  Chien-Chih Chen ,  Yen-Hao Chen

IPC: G03F7/004 ,  H01L21/027 ,  H01L21/02 ,  H01L21/308 ,  C08F220/22 ,  G03F7/42 ,  G03F7/40 ,  G03F7/11 ,  C08F220/18 ,  C11D11/00 ,  H01L21/311

CPC classification number: H01L21/0276 ,  C08F220/18 ,  C08F220/22 ,  C11D11/0047 ,  G03F7/0751 ,  G03F7/091 ,  G03F7/11 ,  G03F7/40 ,  G03F7/405 ,  G03F7/425 ,  H01L21/02118 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31133

Abstract: A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating additive in order to form a floating additive region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating additive may comprise an additive group which will decompose along with a fluorine unit bonded to the additive group which will decompose. Additionally, adhesion between the middle layer and the photoresist may be increased by applying an adhesion promotion layer using either a deposition process or phase separation, or a cross-linking may be performed between the middle layer and the photoresist.

Abstract translation: 提供了一种用于抗反射层的系统和方法。 在一个实施例中，抗反射层包括浮动添加剂，以在抗反射层分散之后沿着抗反射层的顶表面形成浮动添加剂区域。 浮动添加剂可以包含与分解的添加剂基团结合的氟单元分解的添加剂组。 此外，可以通过使用沉积工艺或相分离施加粘合促进层来增加中间层和光致抗蚀剂之间的粘合性，或者可以在中间层和光致抗蚀剂之间进行交联。

公开(公告)号：US20160284557A1

公开(公告)日：2016-09-29

申请号：US14671552

申请日：2015-03-27

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chien-Chih Chen ,  Chia-Wei Chen ,  Ching-Yu Chang ,  Shao-Jyun Wu

IPC: H01L21/308 ,  H01L21/266

CPC classification number: H01L21/3081 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  H01L21/02126 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/266 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/32 ,  H01L21/67075

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming an under layer of a polymeric material on a substrate; forming a silicon-containing middle layer on the under layer, wherein the silicon-containing middle layer has a silicon concentration in weight percentage less than 20% and is wet strippable; forming a patterned photosensitive layer on the silicon-containing middle layer; performing a first etching process to transfer a pattern of the patterned photosensitive layer to the silicon-containing middle layer; performing a second etching process to transfer the pattern to the under layer; and performing a wet stripping process to the silicon-containing middle layer and the under layer.

Abstract translation: 根据一些实施例提供光刻方法。 光刻方法包括在基底上形成聚合物材料的底层; 在所述下层上形成含硅中间层，其中，所述含硅中间层的硅浓度的重量百分比小于20％，并且是湿式可剥离的; 在含硅中间层上形成图案化感光层; 执行第一蚀刻工艺以将图案化感光层的图案转移到含硅中间层; 执行第二蚀刻工艺以将图案转印到下层; 并对含硅中间层和下层进行湿剥离处理。

公开(公告)号：US09543159B2

公开(公告)日：2017-01-10

申请号：US14671552

申请日：2015-03-27

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chien-Chih Chen ,  Chia-Wei Chen ,  Ching-Yu Chang ,  Shao-Jyun Wu

IPC: H01L21/30 ,  H01L21/02 ,  H01L21/308 ,  H01L21/266 ,  H01L21/027 ,  H01L21/32 ,  H01L21/67

CPC classification number: H01L21/3081 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  H01L21/02126 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/266 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/32 ,  H01L21/67075

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming an under layer of a polymeric material on a substrate; forming a silicon-containing middle layer on the under layer, wherein the silicon-containing middle layer has a silicon concentration in weight percentage less than 20% and is wet strippable; forming a patterned photosensitive layer on the silicon-containing middle layer; performing a first etching process to transfer a pattern of the patterned photosensitive layer to the silicon-containing middle layer; performing a second etching process to transfer the pattern to the under layer; and performing a wet stripping process to the silicon-containing middle layer and the under layer.

Abstract translation: 根据一些实施例提供光刻方法。 光刻方法包括在基底上形成聚合物材料的底层; 在所述下层上形成含硅中间层，其中，所述含硅中间层的硅浓度的重量百分比小于20％，并且是湿式可剥离的; 在含硅中间层上形成图案化感光层; 执行第一蚀刻工艺以将图案化感光层的图案转移到含硅中间层; 执行第二蚀刻工艺以将图案转印到下层; 并对含硅中间层和下层进行湿剥离处理。

公开(公告)号：US20150370164A1

公开(公告)日：2015-12-24

申请号：US14310058

申请日：2014-06-20

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chien-Chih Chen

IPC: G03F7/027 ,  G03F7/004 ,  G03F7/38

CPC classification number: C07C229/40 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/26 ,  G03F7/40

Abstract: Methods of forming a semiconductor device using a photoresist additive and methods of making a photoresist composition using the photoresist additive are disclosed. The photosensitive additive includes a polymer; at least one photo-acid generator (PAG); and at least one additive compound comprising a base and an acid-labile group (ALG). The at least one additive compound undergoes intramolecular cyclization to from a cyclic amide compound in the presence of acid. The at least one additive compound also neutralizes acid generated by the PAG without consuming the acid and does not absorb much light in the exposure areas.

Abstract translation: 公开了使用光致抗蚀剂添加剂形成半导体器件的方法和使用光致抗蚀剂添加剂制备光致抗蚀剂组合物的方法。 光敏添加剂包括聚合物; 至少一种光酸产生剂（PAG）; 和至少一种包含碱和酸不稳定基团（ALG）的添加剂化合物。 所述至少一种添加剂化合物在酸存在下进行分子内环化至环状酰胺化合物。 所述至少一种添加剂化合物还中和PAG产生的酸，而不消耗酸，并且不会在曝光区域吸收太多的光。

公开(公告)号：US11955444B2

公开(公告)日：2024-04-09

申请号：US17450780

申请日：2021-10-13

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Manikandan Arumugam ,  Tsung-Yi Yang ,  Chien-Chih Chen ,  Mu-Han Cheng ,  Kuo-Hsien Cheng

IPC: H01L23/48 ,  H01L23/00 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L24/08 ,  H01L24/03 ,  H01L24/05 ,  H01L24/80 ,  H01L2224/0345 ,  H01L2224/03616 ,  H01L2224/05026 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05193 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first conductive structure disposed within a first layer of the semiconductor structure. The semiconductor structure includes a dielectric structure disposed within a second layer of the semiconductor structure, with the second layer being disposed on the first layer. The semiconductor structure includes a second conductive structure disposed within a recessed portion of the dielectric structure that extends to the first conductive structure, with the second conductive structure having a concave recessed portion on a top surface of the second conductive structure. The semiconductor structure includes multiple layers of conductive material disposed within the concave recessed portion of the second conductive structure.

公开(公告)号：US10468249B2

公开(公告)日：2019-11-05

申请号：US14868043

申请日：2015-09-28

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chien-Chih Chen ,  Chien-Wei Wang

IPC: H01L21/033 ,  H01L21/027 ,  G03F7/09

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming a metal-containing layer on a substrate, the metal-containing layer including a plurality of conjugates of metal-hydroxyl groups; treating the metal-containing layer at temperature that is lower than about 300° C. thereby causing a condensation reaction involving the plurality of conjugates of metal-hydroxyl groups; forming a patterned photosensitive layer on the treated metal-containing layer; and developing the patterned photosensitive layer so as to allow at least about 6% decrease of optimum exposure (Eop).