Invention Grant
- Patent Title: Solar cell emitter region fabrication with differentiated P-type and N-type region architectures
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Application No.: US14919049Application Date: 2015-10-21
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Publication No.: US09634177B2Publication Date: 2017-04-25
- Inventor: Seung Bum Rim , David D. Smith , Taiqing Qiu , Staffan Westerberg , Kieran Mark Tracy , Venkatasubramani Balu
- Applicant: Seung Bum Rim , David D. Smith , Taiqing Qiu , Staffan Westerberg , Kieran Mark Tracy , Venkatasubramani Balu
- Applicant Address: US CA San Jose
- Assignee: SunPower Corporation
- Current Assignee: SunPower Corporation
- Current Assignee Address: US CA San Jose
- Agency: Blakely Sokoloff Taylor Zafman LLP
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0224 ; H01L31/068 ; H01L31/20 ; H01L31/0236 ; H01L31/0368 ; H01L31/0216 ; H01L31/0745 ; H01L31/0747

Abstract:
Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.
Public/Granted literature
- US20160043267A1 SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES Public/Granted day:2016-02-11
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