公开(公告)号：US20170222072A1

公开(公告)日：2017-08-03

申请号：US15493021

申请日：2017-04-20

申请人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

发明人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0368

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

公开(公告)号：US20160043267A1

公开(公告)日：2016-02-11

申请号：US14919049

申请日：2015-10-21

申请人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

发明人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

IPC分类号： H01L31/18 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/0224 ,  H01L31/068

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

公开(公告)号：US09634177B2

公开(公告)日：2017-04-25

申请号：US14919049

申请日：2015-10-21

申请人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

发明人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/20 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/0216 ,  H01L31/0745 ,  H01L31/0747

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

公开(公告)号：US20170288070A1

公开(公告)日：2017-10-05

申请号：US15089381

申请日：2016-04-01

申请人： Kieran Mark Tracy ,  David D. Smith ,  Venkatasubramani Balu ,  Asnat Masad ,  Ann Waldhauer

发明人： Kieran Mark Tracy ,  David D. Smith ,  Venkatasubramani Balu ,  Asnat Masad ,  Ann Waldhauer

IPC分类号： H01L31/0236 ,  H01L31/0747 ,  H01L31/20 ,  H01L31/0216

CPC分类号： H01L31/02363 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/035281 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  Y02E10/50 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548

摘要： Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.

公开(公告)号：US20150380581A1

公开(公告)日：2015-12-31

申请号：US14317672

申请日：2014-06-27

申请人： Michael C. Johnson ,  Kieran Mark Tracy ,  Princess Carmi Tomada ,  David D. Smith ,  Seung Bum Rim ,  Périne Jaffrennou

发明人： Michael C. Johnson ,  Kieran Mark Tracy ,  Princess Carmi Tomada ,  David D. Smith ,  Seung Bum Rim ,  Périne Jaffrennou

IPC分类号： H01L31/0368 ,  H01L31/028 ,  H01L31/18 ,  H01L31/077 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/0376

CPC分类号： H01L31/02167 ,  H01L31/02363 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  Y02E10/547

摘要： Methods of passivating light-receiving surfaces of solar cells with crystalline silicon, and the resulting solar cells, are described. In an example, a solar cell includes a silicon substrate having a light-receiving surface. An intrinsic silicon layer is disposed above the light-receiving surface of the silicon substrate. An N-type silicon layer is disposed on the intrinsic silicon layer. One or both of the intrinsic silicon layer and the N-type silicon layer is a micro- or poly-crystalline silicon layer. In another example, a solar cell includes a silicon substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the silicon substrate. An N-type micro- or poly-crystalline silicon layer disposed on the passivating dielectric layer.

摘要翻译： 描述了用结晶硅钝化太阳能电池的光接收表面的方法和所得的太阳能电池。 在一个示例中，太阳能电池包括具有光接收表面的硅衬底。 本征硅层设置在硅衬底的光接收表面之上。 N型硅层设置在本征硅层上。 本征硅层和N型硅层中的一个或两个是微晶或多晶硅层。 在另一示例中，太阳能电池包括具有受光面的硅基板。 钝化介质层设置在硅衬底的光接收表面上。 设置在钝化介电层上的N型微晶或多晶硅层。

公开(公告)号：US20160284923A1

公开(公告)日：2016-09-29

申请号：US14866239

申请日：2015-09-25

申请人： Michael C. Johnson ,  Taiqing Qiu ,  David D. Smith ,  Peter John Cousins ,  Staffan Westerberg

发明人： Michael C. Johnson ,  Taiqing Qiu ,  David D. Smith ,  Peter John Cousins ,  Staffan Westerberg

IPC分类号： H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a thin dielectric layer on a surface of a substrate by radical oxidation or plasma oxidation of the surface of the substrate. The method also involves forming a silicon layer over the thin dielectric layer. The method also involves forming a plurality of emitter regions from the silicon layer.

摘要翻译： 本文描述了制造太阳能电池的方法和所得到的太阳能电池。 在一个示例中，制造太阳能电池的方法包括通过基底表面的自由基氧化或等离子体氧化在基板的表面上形成薄的电介质层。 该方法还涉及在薄介电层上形成硅层。 该方法还涉及从硅层形成多个发射极区域。

公开(公告)号：US20170288074A1

公开(公告)日：2017-10-05

申请号：US15334706

申请日：2016-10-26

申请人： David D. Smith ,  Timothy Weidman ,  Scott Harrington ,  Venkatasubramani Balu

发明人： David D. Smith ,  Timothy Weidman ,  Scott Harrington ,  Venkatasubramani Balu

IPC分类号： H01L31/0224 ,  H01L31/0352 ,  H01L31/0216 ,  H01L31/0236

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/0745 ,  Y02E10/50

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed over an exposed outer portion of the first polycrystalline silicon emitter region and is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region. Metallization methods, include etching techniques for forming a first and second conductive contact structure are also described.

公开(公告)号：US09263601B2

公开(公告)日：2016-02-16

申请号：US13723901

申请日：2012-12-21

申请人： Junbo Wu ,  Michael C. Johnson ,  Michael Cudzinovic ,  Joseph Behnke ,  Xi Zhu ,  David D. Smith ,  Richard Sewell Hamilton ,  Xiuwen Tu ,  Seung Bum Rim

发明人： Junbo Wu ,  Michael C. Johnson ,  Michael Cudzinovic ,  Joseph Behnke ,  Xi Zhu ,  David D. Smith ,  Richard Sewell Hamilton ,  Xiuwen Tu ,  Seung Bum Rim

IPC分类号： H01L31/042 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0216

CPC分类号： H01L31/022425 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/50 ,  Y02E10/547

摘要： Enhanced adhesion of seed layers for solar cell conductive contacts and methods of forming solar cell conductive contacts are described. For example, a method of fabricating a solar cell includes forming an adhesion layer above an emitter region of a substrate. A metal seed paste layer is formed on the adhesion layer. The metal seed paste layer and the adhesion layer are annealed to form a conductive layer in contact with the emitter region of the substrate. A conductive contact for the solar cell is formed from the conductive layer.

摘要翻译： 描述了用于太阳能电池导电触点的种子层的增强的附着和形成太阳能电池导电触点的方法。 例如，制造太阳能电池的方法包括在基板的发射极区域的上方形成粘附层。 在粘合层上形成金属种子糊层。 将金属种子糊层和粘附层退火以形成与衬底的发射极区域接触的导电层。 用于太阳能电池的导电接触由导电层形成。

公开(公告)号：US20140080251A1

公开(公告)日：2014-03-20

申请号：US14083141

申请日：2013-11-18

申请人： Peter J. Cousins ,  David D. Smith ,  Seung Bum Rim

发明人： Peter J. Cousins ,  David D. Smith ,  Seung Bum Rim

IPC分类号： H01L31/0236 ,  H01L31/0368

CPC分类号： H01L31/0747 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

摘要翻译： 公开了一种制造高效太阳能电池的方法。 该方法包括在硅衬底的背面上提供薄的电介质层和掺杂的多晶硅层。 随后，可以在硅衬底的背面和前侧上形成高质量的氧化物层和宽带隙掺杂的半导体层。 然后可以执行通过接触开口将金属指板平坦化到掺杂多晶硅层上的金属化工艺。 镀金属指可以形成第一金属网格线。 可以通过将金属直接电镀到硅衬底的背侧上的发射极区域来形成第二金属网格线，从而消除了对第二金属网格线的接触开口的需要。 其中优点在于，制造方法提供了降低的热处理，降低的蚀刻步骤，提高的效率以及用于制造高效率太阳能电池的简化程序。

公开(公告)号：US20160284917A1

公开(公告)日：2016-09-29

申请号：US14672072

申请日：2015-03-27

申请人： Seung Bum Rim ,  David D. Smith ,  Michael C. Johnson ,  Christine Bourdet Simmons

发明人： Seung Bum Rim ,  David D. Smith ,  Michael C. Johnson ,  Christine Bourdet Simmons

IPC分类号： H01L31/075 ,  H01L31/0216 ,  H01L31/077 ,  H01L31/0376 ,  H01L31/0224

CPC分类号： H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/0747 ,  Y02E10/50

摘要： Methods of fabricating solar cells having passivation layers, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a first surface and a second surface. A plurality of emitter regions is disposed on the first surface of the substrate and spaced apart from one another. An amorphous silicon passivation layer is disposed on each of the plurality of emitter regions and between each of the plurality of emitter regions, directly on an exposed portion of the first surface of the substrate.

摘要翻译： 描述了制造具有钝化层的太阳能电池的方法和所得到的太阳能电池。 在一个示例中，太阳能电池包括具有第一表面和第二表面的基板。 多个发射极区域设置在基板的第一表面上并且彼此间隔开。 非晶硅钝化层设置在多个发射极区域中的每一个上，并且在多个发射极区域中的每一个之间，直接位于衬底的第一表面的暴露部分上。