- 专利标题: Methods of manufacturing synthetic diamond material by microwave plasma enhanced chemical vapor deposition from a microwave generator and gas inlet(s) disposed opposite the growth surface area
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申请号: US13994922申请日: 2011-12-14
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公开(公告)号: US09637838B2公开(公告)日: 2017-05-02
- 发明人: Steven Edward Coe , Jonathan James Wilman , Daniel James Twitchen , Geoffrey Alan Scarsbrook , John Robert Brandon , Christopher John Howard Wort , Matthew Lee Markham
- 申请人: Steven Edward Coe , Jonathan James Wilman , Helen Wilman , Daniel James Twitchen , Geoffrey Alan Scarsbrook , John Robert Brandon , Christopher John Howard Wort , Matthew Lee Markham
- 申请人地址: IM Ballasalla
- 专利权人: Element Six Limited
- 当前专利权人: Element Six Limited
- 当前专利权人地址: IM Ballasalla
- 代理机构: Kilpatrick Townsend & Stockton LLP
- 代理商 Dean W. Russell; Clark F. Weight
- 优先权: GB1021870.9 20101223; GB1102877.6 20110218
- 国际申请: PCT/EP2011/072820 WO 20111214
- 国际公布: WO2012/084656 WO 20120628
- 主分类号: C30B25/14
- IPC分类号: C30B25/14 ; C01B31/06 ; C23C16/27 ; C30B29/04 ; H01J37/32 ; C30B25/02 ; C30B25/16
摘要:
Disclosed herein are methods of manufacturing synthetic CVD diamond material including orienting and controlling process gas flow in a microwave plasma reactor to improve performance. The microwave plasma reactor includes a gas flow system with a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area. The method comprises injecting process gases towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cm3 per minute wherein the process gases are injected into the plasma chamber through the one or more gas inlet nozzles with a Reynolds number in a range 1 to 100.
公开/授权文献
- US20140150713A1 CONTROLLING DOPING OF SYNTHETIC DIAMOND MATERIAL 公开/授权日:2014-06-05