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    MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL
    4.
    发明申请
    MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL 审中-公开
    用于制造合成金刚石材料的微波等离子体反应器

    公开(公告)号：US20150030786A1

    公开(公告)日：2015-01-29

    申请号：US13994903

    申请日：2011-12-14

    申请人： Steven Edward Coe ,  Jonathan James Wilman ,  Daniel James Twitchen ,  Geoffrey Alan Scarsbrook ,  John Robert Brandon ,  Christopher John Howard Wort

    发明人： Steven Edward Coe ,  Jonathan James Wilman ,  Daniel James Twitchen ,  Geoffrey Alan Scarsbrook ,  John Robert Brandon ,  Christopher John Howard Wort

    IPC分类号： C23C16/455 ,  C23C16/511 ,  C23C16/27

    CPC分类号： C23C16/45563 ,  C23C16/274 ,  C23C16/45504 ,  C23C16/45565 ,  C23C16/511 ,  C30B25/105 ,  C30B29/04 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/3244 ,  H01J37/32449

    摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the gas flow system comprises a gas inlet nozzle array comprising a plurality of gas inlet nozzles disposed opposite the substrate holder for directing process gases towards the substrate holder, the gas inlet nozzle array comprising: at least six gas inlet nozzles disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber; a gas inlet nozzle number density equal to or greater than 0.1 nozzles/cm2, wherein the gas inlet nozzle number density is measured by projecting the nozzles onto a plane whose normal lies parallel to the central axis of the plasma chamber and measuring the gas inlet number density on said plane; and a nozzle area ratio of equal to or greater than 10, wherein the nozzle area ratio is measured by projecting the nozzles onto a plane whose normal lies parallel to the central axis of the plasma chamber, measuring the total area of the gas inlet nozzle area on said plane, dividing by the total number of nozzles to give an area associated with each nozzle, and dividing the area associated with each nozzle by an actual area of each nozzle.

    摘要翻译： 一种通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：等离子体室; 设置在等离子体室中的衬底保持器，用于支撑在使用中沉积合成金刚石材料的衬底; 用于将微波从微波发生器馈入等离子体室的微波耦合配置; 以及用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 其中所述气体流动系统包括气体入口喷嘴阵列，所述气体入口喷嘴阵列包括与所述衬底保持器相对设置的多个气体入口喷嘴，用于将工艺气体引向所述衬底保持器，所述气体入口喷嘴阵列包括：至少六个气体入口喷嘴， 或相对于等离子体室的中心轴线的发散取向; 气体入口喷嘴数密度等于或大于0.1喷嘴/ cm2，其中气体入口喷嘴数密度通过将喷嘴投影到平行于等离子体室的中心轴线的平面上并测量气体入口数 所述平面上的密度; 并且喷嘴面积比等于或大于10，其中通过将喷嘴投影到平行于等离子体室的中心轴的平面的平面上来测量喷嘴面积比，测量气体入口喷嘴面积的总面积 在所述平面上除以总喷嘴数量以给出与每个喷嘴相关联的区域，并且将与每个喷嘴相关联的区域除以每个喷嘴的实际面积。

    MICROWAVE PLASMA REACTORS AND SUBSTRATES FOR SYNTHETIC DIAMOND MANUFACTURE
    5.
    发明申请
    MICROWAVE PLASMA REACTORS AND SUBSTRATES FOR SYNTHETIC DIAMOND MANUFACTURE 有权
    MICROWAVE等离子体反应器和合成金刚石制造基材

    公开(公告)号：US20140234556A1

    公开(公告)日：2014-08-21

    申请号：US13994813

    申请日：2011-12-14

    申请人： Carlton Nigel Dodge ,  Paul Nicolas Inglis ,  Geoffrey Alan Scarsbrook ,  Timothy Peter Mollart ,  Charles Simon James Pickles ,  Steven Edward Coe ,  Joseph Michael Dodson ,  Alexander Lamb Cullen ,  John Robert Brandon ,  Christopher John Howard Wort

    发明人： Carlton Nigel Dodge ,  Paul Nicolas Inglis ,  Geoffrey Alan Scarsbrook ,  Timothy Peter Mollart ,  Charles Simon James Pickles ,  Steven Edward Coe ,  Joseph Michael Dodson ,  Alexander Lamb Cullen ,  John Robert Brandon ,  Christopher John Howard Wort

    IPC分类号： C23C16/27 ,  C23C16/52 ,  C23C16/511

    CPC分类号： C23C16/274 ,  C01B32/25 ,  C23C16/4586 ,  C23C16/511 ,  C23C16/52 ,  C23C16/56 ,  C30B25/105 ,  C30B29/04 ,  H01J37/32192 ,  H01J37/32284 ,  Y10T428/12993

    摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized axisymmetric Ez electric field profile across the growth surface in use, the localized axisymmetric Ez electric field profile comprising a substantially flat central portion bound by a ring of higher electric field, the substantially flat central portion extending over at least 60% of an area of the growth surface of the substrate and having an Ez electric field variation of no more than ±10% of a central Ez electric field strength, the ring of higher electric field being disposed around the central portion and having a peak Ez electric field strength in a range 10% to 50% higher than the central Ez electric field strength.

    摘要翻译： 一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：微波发生器，其被配置为以频率f产生微波; 等离子体室，其包括基底，顶板和从所述底座延伸到所述顶板的侧壁，所述侧壁限定用于在所述基底和所述顶板之间支撑微波共振模式的共振腔; 用于将微波从微波发生器馈送到等离子体室中的微波耦合配置; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 衬底保持器，其设置在所述等离子体室中并且包括用于支撑衬底的支撑表面; 以及设置在所述支撑表面上的基板，所述基板具有生长表面，所述合成金刚石材料将在其上沉积在所述生长表面上，其中所述共振腔内的所述基板尺寸和位置被选择以产生局部轴对称Ez电场分布 在使用中的生长表面，局部轴对称Ez电场分布包括由较高电场环结合的基本上平坦的中心部分，基本上平坦的中心部分延伸至衬底的生长表面的至少60％的面积; 具有不大于中心Ez电场强度的±10％的Ez电场变化，较高电场的环设置在中心部分周围，并且具有10％至5​​0％以上范围内的峰值Ez电场强度 比中央Ez电场强度高。

    Microwave plasma reactors and substrates for synthetic diamond manufacture
    6.
    发明授权
    Microwave plasma reactors and substrates for synthetic diamond manufacture 有权
    微波等离子体反应器和合成金刚石制造用基材

    公开(公告)号：US08859058B2

    公开(公告)日：2014-10-14

    申请号：US13994813

    申请日：2011-12-14

    申请人： Carlton Nigel Dodge ,  Paul Nicolas Inglis ,  Geoffrey Alan Scarsbrook ,  Timothy Peter Mollart ,  Charles Simon James Pickles ,  Steven Edward Coe ,  Joseph Michael Dodson ,  Alexander Lamb Cullen ,  John Robert Brandon ,  Christopher John Howard Wort

    发明人： Carlton Nigel Dodge ,  Paul Nicolas Inglis ,  Geoffrey Alan Scarsbrook ,  Timothy Peter Mollart ,  Charles Simon James Pickles ,  Steven Edward Coe ,  Joseph Michael Dodson ,  Alexander Lamb Cullen ,  John Robert Brandon ,  Christopher John Howard Wort

    IPC分类号： C23C16/00 ,  C23C16/27 ,  C23C16/52 ,  C23C16/511

    CPC分类号： C23C16/274 ,  C01B32/25 ,  C23C16/4586 ,  C23C16/511 ,  C23C16/52 ,  C23C16/56 ,  C30B25/105 ,  C30B29/04 ,  H01J37/32192 ,  H01J37/32284 ,  Y10T428/12993

    摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapor deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized axisymmetric Ez electric field profile across the growth surface in use, the localized axisymmetric Ez electric field profile comprising a substantially flat central portion bound by a ring of higher electric field, the substantially flat central portion extending over at least 60% of an area of the growth surface of the substrate and having an Ez electric field variation of no more than ±10% of a central Ez electric field strength, the ring of higher electric field being disposed around the central portion and having a peak Ez electric field strength in a range 10% to 50% higher than the central Ez electric field strength.

    摘要翻译： 一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：微波发生器，其被配置为以频率f产生微波; 等离子体室，其包括基底，顶板和从所述底座延伸到所述顶板的侧壁，所述侧壁限定用于在所述基底和所述顶板之间支撑微波共振模式的共振腔; 用于将微波从微波发生器馈送到等离子体室中的微波耦合配置; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 衬底保持器，其设置在所述等离子体室中并且包括用于支撑衬底的支撑表面; 以及设置在所述支撑表面上的基板，所述基板具有生长表面，所述合成金刚石材料将在其上沉积在所述生长表面上，其中所述共振腔内的所述基板尺寸和位置被选择以产生局部轴对称Ez电场分布 在使用中的生长表面，局部轴对称Ez电场分布包括由较高电场环结合的基本上平坦的中心部分，基本上平坦的中心部分延伸至衬底的生长表面的至少60％的面积; 具有不大于中心Ez电场强度的±10％的Ez电场变化，较高电场的环设置在中心部分周围，并且具有10％至5​​0％以上范围内的峰值Ez电场强度 比中央Ez电场强度高。

    Method of manufacturing diamond substrates
    7.
    发明授权
    Method of manufacturing diamond substrates 有权
    制造金刚石基底的方法

    公开(公告)号：US07837793B2

    公开(公告)日：2010-11-23

    申请号：US10566275

    申请日：2004-07-26

    申请人： Christopher John Howard Wort ,  Daniel James Twitchen ,  Geoffrey Alan Scarsbrook

    发明人： Christopher John Howard Wort ,  Daniel James Twitchen ,  Geoffrey Alan Scarsbrook

    IPC分类号： C30B35/00

    CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/04 ,  C30B33/00 ,  C30B33/06 ,  C30B35/002 ,  Y10T117/10

    摘要： A tiled array of diamond plates, which is suitable for wafer scale processing, for example, in the manufacture of electronic or other device structures on the diamond plates. The diamond plates are fixed to a support layer, preferably a polycrystalline diamond support layer, in a substantially planar arrangement such that at least one of the major surfaces of the respective fixed diamond plates defines a fabrication surface that is exposed for further processing. The support layer may be a backing layer, in which case only one of the major faces of the diamond substrate is exposed for further processing, or may extend between respective diamond substrates such that both major surfaces are exposed for further processing.

    摘要翻译： 金刚石板的平铺阵列，其适用于晶片尺寸加工，例如在金刚石板上制造电子或其它器件结构。 金刚石板以基本上平面的布置固定到支撑层，优选多晶金刚石支撑层，使得相应固定金刚石板的至少一个主表面限定暴露以进一步处理的制造表面。 支撑层可以是背衬层，在这种情况下，金刚石衬底的仅仅一个主面被暴露以进一步处理，或者可以在相应的金刚石衬底之间延伸，使得两个主表面被暴露以用于进一步处理。

    Diamond transistor and method of manufacture thereof
    8.
    发明授权
    Diamond transistor and method of manufacture thereof 有权
    金刚石晶体管及其制造方法

    公开(公告)号：US07981721B2

    公开(公告)日：2011-07-19

    申请号：US11912414

    申请日：2006-04-28

    申请人： Geoffrey Alan Scarsbrook ,  Daniel James Twitchen ,  Christopher John Howard Wort ,  Michael Schwitters ,  Erhard Kohn

    发明人： Geoffrey Alan Scarsbrook ,  Daniel James Twitchen ,  Christopher John Howard Wort ,  Michael Schwitters ,  Erhard Kohn

    IPC分类号： H01L29/12 ,  H01L29/30

    CPC分类号： C30B25/20 ,  C30B29/04 ,  H01L29/1602 ,  H01L29/66045

    摘要： A method of manufacturing a transistor, typically a MESFET, includes providing a substrate including single crystal diamond material having a growth surface on which further layers of diamond material can be deposited. The substrate is preferably formed by a CVD process and has high purity. The growth surface has a root-mean-square roughness of 3 nm or less, or is free of steps or protrusions larger than 3 nm. Further diamond layers are deposited on the growth surface to define the active regions of the transistor. An optional n+ shielding layer can be formed in or on the substrate, following which an additional layer of high purity diamond is deposited. A layer of intrinsic diamond may be formed directly on the upper surface of the high purity layer, followed by a boron doped (“delta doped”) layer. A trench is formed in the delta doped layer to define a gate region.

    摘要翻译： 制造通常为MESFET的晶体管的方法包括提供包括具有生长表面的单晶金刚石材料的衬底，在该生长表面上可沉积另外的金刚石材料层。 基板优选通过CVD工艺形成并且具有高纯度。 生长面的均方根粗糙度为3nm以下，或者没有大于3nm的台阶或突起。 另外的金刚石层沉积在生长表面上以限定晶体管的有源区。 可以在衬底中或衬底上形成可选的n +屏蔽层，随后沉积另外的高纯度金刚石层。 内在金刚石层可以直接形成在高纯度层的上表面上，随后是硼掺杂（“δ掺杂”）层。 在δ掺杂层中形成沟槽以限定栅极区域。

    Diamond sensors, detectors, and quantum devices
    10.
    发明授权
    Diamond sensors, detectors, and quantum devices 有权
    钻石传感器，探测器和量子设备

    公开(公告)号：US09249526B2

    公开(公告)日：2016-02-02

    申请号：US14111550

    申请日：2012-05-01

    申请人： Daniel James Twitchen ,  Matthew Lee Markham ,  Geoffrey Alan Scarsbrook

    发明人： Daniel James Twitchen ,  Matthew Lee Markham ,  Geoffrey Alan Scarsbrook

    IPC分类号： C30B29/04 ,  C30B25/02 ,  C30B31/22 ,  C30B33/00 ,  G06N99/00

    CPC分类号： C30B29/04 ,  C30B25/02 ,  C30B31/22 ,  C30B33/00 ,  G06N99/002

    摘要： A synthetic single crystal diamond material comprising: a first region comprising electron donor defects; a second region comprising quantum spin defects; and a third region between the first and second regions. The second and third regions have a lower concentration of electron donor defects than the first region. The first and second regions are sufficiently close to allow electrons to be donated from the first region to the second region, thus forming negatively charged quantum spin defects in the second and positively charged defects in the first region, and sufficiently far apart to reduce other coupling interactions between the first and second regions which would otherwise unduly reduce the decoherence time of the plurality of quantum spin defects and/or produce strain broaden of a spectral line width of the plurality of quantum spin defects in the second region.

    摘要翻译： 一种合成单晶金刚石材料，包括：包含电子供体缺陷的第一区域; 包括量子自旋缺陷的第二区域; 以及第一和第二区域之间的第三区域。 第二和第三区域的电子供体缺陷浓度比第一区域低。 第一和第二区域足够接近以允许电子从第一区域捐赠到第二区域，从而在第一区域中的第二和带正电的缺陷中形成带负电的量子自旋缺陷，并且足够远的距离以减少其它耦合 第一和第二区域之间的相互作用，否则将过度地减少多个量子自旋缺陷的去相干时间和/或产生第二区域中的多个量子自旋缺陷的谱线宽度的应变扩大。