Invention Grant
- Patent Title: Optoelectronic semiconductor chip
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Application No.: US15098779Application Date: 2016-04-14
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Publication No.: US09647174B2Publication Date: 2017-05-09
- Inventor: Joachim Hertkorn , Karl Engl , Berthold Hahn , Andreas Weimar
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE
- Agency: DLA Piper LLP (US)
- Priority: DE102011114671 20110930
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/14 ; H01L21/02 ; H01L33/22 ; H01L33/02 ; H01L33/12 ; H01L33/24 ; H01L33/32 ; H01L33/06

Abstract:
An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates radiation and at least one n-doped layer adjoining the active layer, the semiconductor layer sequence is based on AlInGaN or on InGaN, one or a plurality of central layers composed of AlGaN each having thicknesses of 25 nm to 200 nm are grown at a side of the n-doped layer facing away from a carrier substrate, a coalescence layer of doped or undoped GaN having a thickness of 300 nm to 1.2 μm is formed at a side of the central layer or one of the central layers facing away from the carrier substrate, a roughening extends from the coalescence layer as far as or into the n-doped layer, a radiation exit area of the semiconductor layer stack is formed partly by the coalescence layer, and the central layer is exposed in places.
Public/Granted literature
- US20160225952A1 OPTOELECTRONIC SEMICONDUCTOR CHIP Public/Granted day:2016-08-04
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