Invention Grant
- Patent Title: Plasma-based material modification using a plasma source with magnetic confinement
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Application No.: US14201747Application Date: 2014-03-07
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Publication No.: US09653253B2Publication Date: 2017-05-16
- Inventor: William Divergilio , Stephen Savas , Susan Felch , Tienyu Sheng , Hao Chen
- Applicant: Advanced Ion Beam Technology, Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: ADVANCED ION BEAM TECHNOLOGY, INC.
- Current Assignee: ADVANCED ION BEAM TECHNOLOGY, INC.
- Current Assignee Address: TW Hsin-Chu
- Agency: Morrison & Foerster LLP
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01J37/08 ; H01J37/30 ; H01J37/32

Abstract:
A plasma-based material modification system for material modification of a work piece may include a plasma source chamber coupled to a process chamber. A support structure, configured to support the work piece, may be disposed within the process chamber. The plasma source chamber may include a first plurality of magnets, a second plurality of magnets, and a third plurality of magnets that surround a plasma generation region within the plasma source chamber. The plasma source chamber may be configured to generate a plasma having ions within the plasma generation region. The third plurality of magnets may be configured to confine a majority of electrons of the plasma having energy greater than 10 eV within the plasma generation region while allowing ions from the plasma to pass through the third plurality of magnets into the process chamber for material modification of the work piece.
Public/Granted literature
- US20150255242A1 PLASMA-BASED MATERIAL MODIFICATION USING A PLASMA SOURCE WITH MAGNETIC CONFINEMENT Public/Granted day:2015-09-10
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