公开(公告)号：US09653253B2

公开(公告)日：2017-05-16

申请号：US14201747

申请日：2014-03-07

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： William Divergilio ,  Stephen Savas ,  Susan Felch ,  Tienyu Sheng ,  Hao Chen

IPC: H01J37/317 ,  H01J37/08 ,  H01J37/30 ,  H01J37/32

CPC classification number: H01J37/08 ,  H01J37/3007 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/3266 ,  H01J2237/061 ,  H01J2237/083

Abstract: A plasma-based material modification system for material modification of a work piece may include a plasma source chamber coupled to a process chamber. A support structure, configured to support the work piece, may be disposed within the process chamber. The plasma source chamber may include a first plurality of magnets, a second plurality of magnets, and a third plurality of magnets that surround a plasma generation region within the plasma source chamber. The plasma source chamber may be configured to generate a plasma having ions within the plasma generation region. The third plurality of magnets may be configured to confine a majority of electrons of the plasma having energy greater than 10 eV within the plasma generation region while allowing ions from the plasma to pass through the third plurality of magnets into the process chamber for material modification of the work piece.

公开(公告)号：US20170069467A1

公开(公告)日：2017-03-09

申请号：US15254265

申请日：2016-09-01

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Wei-Cheng Lin ,  Yoko Kawai Parker ,  Tienyu Sheng

IPC: H01J37/32 ,  C23C16/50 ,  C23C14/34

CPC classification number: H01J37/32422 ,  H01J37/32715 ,  H01J2237/3321 ,  H01J2237/334

Abstract: A plasma-based processing system and a corresponding operation method are proposed. One or more absorbers are positioned between a plasma generation volume inside the plasma chamber and a support structure configured to support the workpiece, and then a portion of plasma delivered from the plasma generation volume to the support structure (or the workpiece) is absorbed by the absorber(s). Further, the absorber(s) are made of electrical conductive material(s), and the structure of at least one absorber and/or the relative geometric relation between at least two absorbers is adjustable. Hence, the position(s) of the electric conductor(s) overlap(s) with the delivered plasma may be adjusted, and then the ion current distribution on the cross section of the delivered plasma may be modified correspondingly.

Abstract translation: 提出了一种基于等离子体的处理系统和相应的操作方法。 一个或多个吸收器位于等离子体室内的等离子体产生体积和构造成支撑工件的支撑结构之间，然后从等离子体产生体积传送到支撑结构（或工件）的等离子体的一部分被 吸收剂。 此外，吸收体由导电材料制成，并且至少一个吸收体的结构和/或至少两个吸收体之间的相对几何关系是可调整的。 因此，可以调节电导体的位置与所输送的等离子体的重叠，然后相应地改变所输送的等离子体的横截面上的离子电流分布。