- 专利标题： Trench metal-insulator-metal capacitor with oxygen gettering layer
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申请号： US14572974申请日： 2014-12-17
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公开(公告)号： US09653534B2公开(公告)日： 2017-05-16
- 发明人: Takashi Ando , Eduard A. Cartier , Michael P. Chudzik , Aritra Dasgupta , Herbert L. Ho , Donghun Kang , Rishikesh Krishnan , Vijay Narayanan , Kern Rim
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Steven J. Meyers
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L49/02 ; H01L27/108 ; H01L23/26
摘要：
A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.
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