Invention Grant
- Patent Title: Semiconductor device formed with nanowire
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Application No.: US15166271Application Date: 2016-05-27
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Publication No.: US09653549B2Publication Date: 2017-05-16
- Inventor: Chun Jen Chen , Bin-Siang Tsai , Tsai-Yu Wen , Yu Shu Lin , Chin-Sheng Yang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L21/02 ; H01L29/423 ; H01L29/78 ; H01L29/165 ; H01L29/775 ; H01L29/41
Abstract:
A semiconductor device is provided. The semiconductor device includes a substrate; a first nanowire disposed over the substrate; a second nanowire disposed over the substrate; a first pad formed at first ends of the first and second nanowires, a second pad formed at second ends of the first and second nanowires, wherein the pads comprise different materials than the nanowires; and a gate surrounding at least a portion of each of the first and second nanowires.
Public/Granted literature
- US20160276434A1 SEMICONDUCTOR DEVICE FORMED WITH NANOWIRE Public/Granted day:2016-09-22
Information query
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