- Patent Title: Integrated circuit protected from short circuits caused by silicide
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Application No.: US14806432Application Date: 2015-07-22
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Publication No.: US09666484B2Publication Date: 2017-05-30
- Inventor: Arnaud Regnier , Stephan Niel , Francesco La Rosa
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Seed IP Law Group LLP
- Priority: FR1351837 20130301
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/8234 ; H01L29/49 ; H01L21/265 ; H01L27/108 ; H01L27/1157 ; H01L29/772 ; H01L21/28 ; H01L29/423 ; H01L29/788 ; H01L27/11524 ; H01L27/11556

Abstract:
An integrated circuit is formed on a semiconductor substrate and includes a trench conductor and a first transistor formed on the surface of the substrate. The transistor includes: a transistor gate structure, a first doped region extending in the substrate between a first edge of the gate structure and an upper edge of the trench conductor, and a first spacer formed on the first edge of the gate structure and above the first doped region. The first spacer completely covers the first doped region and a silicide is present on the trench conductor but is not present on the surface of the first doped region.
Public/Granted literature
- US20150325581A1 INTEGRATED CIRCUIT PROTECTED FROM SHORT CIRCUITS CAUSED BY SILICIDE Public/Granted day:2015-11-12
Information query
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