- Patent Title: Structure and formation method of semiconductor device structure
-
Application No.: US14930231Application Date: 2015-11-02
-
Publication No.: US09673331B2Publication Date: 2017-06-06
- Inventor: Che-Cheng Chang , Chih-Han Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/336 ; H01L21/8234 ; H01L29/49 ; H01L21/28 ; H01L21/3105 ; H01L21/321 ; H01L29/51 ; H01L21/8238 ; H01L27/088 ; H01L21/84 ; H01L27/12 ; H01L27/092
Abstract:
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate and a gate stack covering a portion of the fin structure. The gate stack includes a gate dielectric layer, a work function layer, and a conductive filling over the work function layer. The semiconductor device structure also includes a dielectric layer covering the fin structure. The dielectric layer is in direct contact with the conductive filling.
Public/Granted literature
- US20170125594A1 STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE Public/Granted day:2017-05-04
Information query
IPC分类:
