Invention Grant
- Patent Title: Driver circuit charging charge node
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Application No.: US15189136Application Date: 2016-06-22
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Publication No.: US09685237B2Publication Date: 2017-06-20
- Inventor: Hyunkook Park , Yeongtaek Lee , Daeseok Byeon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0144844 20151016
- Main IPC: G11C7/12
- IPC: G11C7/12 ; G11C8/08 ; G11C5/06 ; G11C16/28 ; H03K5/08 ; H03K5/24 ; G11C16/08 ; G11C16/04 ; G11C16/10 ; G11C16/16 ; G11C13/00 ; G11C7/06 ; G11C5/14

Abstract:
Disclosed is a driver circuit. The driver circuit includes a clamp transistor, a comparison voltage transistor, an amplification transistor, a bias transistor, and a charge circuit. The comparison voltage is configured to provide a comparison voltage. The amplification transistor includes an amplification gate connected to a first node of the clamp transistor, a first amplification node configured to receive the comparison voltage, and a second amplification node connected to a gate of the clamp transistor. The bias transistor is configured to supply a bias voltage. The charge circuit is at least one of configured to drain a current from the first node through the clamp transistor and configured to supply a current to the first node through the clamp transistor.
Public/Granted literature
- US20170110197A1 DRIVER CIRCUIT CHARGING CHARGE NODE Public/Granted day:2017-04-20
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