Invention Grant
- Patent Title: Abrasive composition and method for producing semiconductor substrate
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Application No.: US14382876Application Date: 2013-03-12
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Publication No.: US09685341B2Publication Date: 2017-06-20
- Inventor: Yoshio Mori , Kohsuke Tsuchiya , Maki Asada , Shuhei Takahashi
- Applicant: FUJIMI INCORPORATED
- Applicant Address: JP Kiyosu-Shi
- Assignee: FUJIMI INCORPORATED
- Current Assignee: FUJIMI INCORPORATED
- Current Assignee Address: JP Kiyosu-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2012-057641 20120314
- International Application: PCT/JP2013/056702 WO 20130312
- International Announcement: WO2013/137212 WO 20130919
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/321 ; C09K3/14 ; B24B1/00 ; C09G1/00 ; C09G1/04 ; C09G1/06 ; B24B37/04 ; H01L21/02 ; C09G1/02
Abstract:
The polishing composition has a pH of 7 or more and is used in applications for polishing a silicon substrate. The polishing composition contains abrasive grains and a water-soluble polymer. The water-soluble polymer is a copolymer including a first monomer unit having a characteristic value P of 50-100 inclusive, and a second monomer unit having a characteristic value P of at least −100 and less than 50. The characteristic value P is the result of subtracting an adsorption coefficient S2 of the abrasive grains obtained through a specific standard test B from a wettability coefficient S1 of the silicon substrate obtained through a specific standard test A.
Public/Granted literature
- US20150079789A1 ABRASIVE COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE Public/Granted day:2015-03-19
Information query
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