Invention Grant
- Patent Title: Vertically stacked heterostructures including graphene
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Application No.: US14654164Application Date: 2013-12-20
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Publication No.: US09685559B2Publication Date: 2017-06-20
- Inventor: Xiangfeng Duan , Woojong Yu , Yuan Liu , Yu Huang
- Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Agency: Foley & Lardner LLP
- Agent Cliff Z. Liu
- International Application: PCT/US2013/077239 WO 20131220
- International Announcement: WO2014/100723 WO 20140626
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/417 ; H01L29/45 ; H01L31/113 ; H01L31/032 ; H01L31/0224 ; H01L29/16 ; H01L29/66
Abstract:
A vertically stacked heterostructure device includes: (1) a substrate; and (2) vertically stacked layers disposed over the substrate and including (a) a source electrode including a layer of graphene; (b) a drain electrode; and (c) a semiconducting channel disposed between the source electrode and the drain electrode. During operation of the device, a current is configured to flow between the source electrode and the drain electrode through the semiconducting channel.
Public/Granted literature
- US20150318401A1 VERTICALLY STACKED HETEROSTRUCTURES INCLUDING GRAPHENE Public/Granted day:2015-11-05
Information query
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