公开(公告)号：US10901243B2

公开(公告)日：2021-01-26

申请号：US16308383

申请日：2017-06-09

Applicant: The Regents of the University of California

Inventor： Chee Wei Wong ,  Baicheng Yao ,  Yuan Liu ,  Xiangfeng Duan

IPC: G02F1/025 ,  G02B6/122 ,  G02B6/42 ,  G02F1/01

Abstract: Methods and apparatus for providing all-optically generated, on-chip propagated and high-efficiency tunable plasmons are described. The plasmon generating apparatus includes a graphene based silicon nitride waveguide (GSiNW) utilizing ‘C+L’ band light sources and detectors that take advantage of the surface 2nd nonlinearity on graphene. The optical generation is accomplished via one or more optical communication lasers through the difference-frequency generation process. The THz frequency and intensity is tunable via an external gate voltage. Using such a device the optical to THz conversion may be made at least an order of magnitude more efficient than prior THz sources, and can be used to make chip-scale room-temperature THz sources, switches, modulators and detectors based on graphene.

公开(公告)号：US20150318401A1

公开(公告)日：2015-11-05

申请号：US14654164

申请日：2013-12-20

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Xiangfeng Duan ,  Woojong Yu ,  Yuan Liu ,  Yu Huang

IPC: H01L29/786 ,  H01L31/0224 ,  H01L31/113 ,  H01L31/032 ,  H01L29/417 ,  H01L29/45

CPC classification number: H01L29/7869 ,  H01L29/1606 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78642 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78693 ,  H01L29/78696 ,  H01L31/022408 ,  H01L31/032 ,  H01L31/113

Abstract: A vertically stacked heterostructure device includes: (1) a substrate; and (2) vertically stacked layers disposed over the substrate and including (a) a source electrode including a layer of graphene; (b) a drain electrode; and (c) a semiconducting channel disposed between the source electrode and the drain electrode. During operation of the device, a current is configured to flow between the source electrode and the drain electrode through the semiconducting channel.

Abstract translation: 垂直堆叠的异质结构器件包括：（1）衬底; 和（2）设置在所述衬底上的垂直堆叠层，并且包括（a）包括石墨烯层的源电极; （b）漏电极; 和（c）设置在源电极和漏电极之间的半导体沟道。 在器件工作期间，电流被配置为通过半导体通道在源电极和漏电极之间流动。

公开(公告)号：US20210020744A1

公开(公告)日：2021-01-21

申请号：US16982477

申请日：2019-03-19

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Xiangfeng Duan ,  Yu HUANG ,  Yuan Liu

IPC: H01L29/06 ,  H01L51/05 ,  H01L29/786 ,  H01L29/66

Abstract: An electronic or optoelectronic device includes: (1) a layer of a first material; and (2) a layer of a second material disposed on the layer of the first material, wherein the first material is different from the second material, and the layer of the first material is spaced from the layer of the second material by a gap.

公开(公告)号：US09685559B2

公开(公告)日：2017-06-20

申请号：US14654164

申请日：2013-12-20

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Xiangfeng Duan ,  Woojong Yu ,  Yuan Liu ,  Yu Huang

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/45 ,  H01L31/113 ,  H01L31/032 ,  H01L31/0224 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/1606 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78642 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78693 ,  H01L29/78696 ,  H01L31/022408 ,  H01L31/032 ,  H01L31/113

Abstract: A vertically stacked heterostructure device includes: (1) a substrate; and (2) vertically stacked layers disposed over the substrate and including (a) a source electrode including a layer of graphene; (b) a drain electrode; and (c) a semiconducting channel disposed between the source electrode and the drain electrode. During operation of the device, a current is configured to flow between the source electrode and the drain electrode through the semiconducting channel.

公开(公告)号：US11575006B2

公开(公告)日：2023-02-07

申请号：US16982477

申请日：2019-03-19

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Xiangfeng Duan ,  Yu Huang ,  Yuan Liu

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/786 ,  H01L51/05 ,  H01L31/0352 ,  H01L33/20

Abstract: An electronic or optoelectronic device includes: (1) a layer of a first material; and (2) a layer of a second material disposed on the layer of the first material, wherein the first material is different from the second material, and the layer of the first material is spaced from the layer of the second material by a gap.

公开(公告)号：US20190137795A1

公开(公告)日：2019-05-09

申请号：US16308383

申请日：2017-06-09

Applicant: The Regents of the University of California

Inventor： Chee Wei Wong ,  Baicheng Yao ,  Yuan Liu ,  Xiangfeng Duan

IPC: G02F1/025 ,  G02B6/122 ,  G02B6/42 ,  G02F1/01

Abstract: Methods and apparatus for providing all-optically generated, on-chip propagated and high-efficiency tunable plasmons are described. The plasmon generating apparatus includes a graphene based silicon nitride waveguide (GSiNW) utilizing ‘C+L’ band light sources and detectors that take advantage of the surface 2nd nonlinearity on graphene. The optical generation is accomplished via one or more optical communication lasers through the difference-frequency generation process. The THz frequency and intensity is tunable via an external gate voltage. Using such a device the optical to THz conversion may be made at least an order of magnitude more efficient than prior THz sources, and can be used to make chip-scale room-temperature THz sources, switches, modulators and detectors based on graphene.