公开(公告)号：US20150318401A1

公开(公告)日：2015-11-05

申请号：US14654164

申请日：2013-12-20

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Xiangfeng Duan ,  Woojong Yu ,  Yuan Liu ,  Yu Huang

IPC: H01L29/786 ,  H01L31/0224 ,  H01L31/113 ,  H01L31/032 ,  H01L29/417 ,  H01L29/45

CPC classification number: H01L29/7869 ,  H01L29/1606 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78642 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78693 ,  H01L29/78696 ,  H01L31/022408 ,  H01L31/032 ,  H01L31/113

Abstract: A vertically stacked heterostructure device includes: (1) a substrate; and (2) vertically stacked layers disposed over the substrate and including (a) a source electrode including a layer of graphene; (b) a drain electrode; and (c) a semiconducting channel disposed between the source electrode and the drain electrode. During operation of the device, a current is configured to flow between the source electrode and the drain electrode through the semiconducting channel.

Abstract translation: 垂直堆叠的异质结构器件包括：（1）衬底; 和（2）设置在所述衬底上的垂直堆叠层，并且包括（a）包括石墨烯层的源电极; （b）漏电极; 和（c）设置在源电极和漏电极之间的半导体沟道。 在器件工作期间，电流被配置为通过半导体通道在源电极和漏电极之间流动。

公开(公告)号：US09685559B2

公开(公告)日：2017-06-20

申请号：US14654164

申请日：2013-12-20

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Xiangfeng Duan ,  Woojong Yu ,  Yuan Liu ,  Yu Huang

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/45 ,  H01L31/113 ,  H01L31/032 ,  H01L31/0224 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/1606 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78642 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78693 ,  H01L29/78696 ,  H01L31/022408 ,  H01L31/032 ,  H01L31/113

Abstract: A vertically stacked heterostructure device includes: (1) a substrate; and (2) vertically stacked layers disposed over the substrate and including (a) a source electrode including a layer of graphene; (b) a drain electrode; and (c) a semiconducting channel disposed between the source electrode and the drain electrode. During operation of the device, a current is configured to flow between the source electrode and the drain electrode through the semiconducting channel.