Single-atom tailoring of platinum nanocatalysts for high-performance multifunctional electrocatalysis

    公开(公告)号:US12255339B2

    公开(公告)日:2025-03-18

    申请号:US17605192

    申请日:2020-04-21

    Abstract: Provided herein are catalyst materials comprising a catalyst support; and PtM′ nanowires affixed to the catalyst support, wherein the PtM′ nanowires include single atomic species of M′ at exterior surfaces of the PtM′ nanowires, and M′ represents at least one metal, e.g., a metal different from Pt. Also disclosed are manufacturing methods comprising: providing initial MM′ nanowires having an initial molar ratio of M:M′, wherein M is a noble metal, and M′ is a metal different from M; subjecting the initial MM′ nanowires to electrochemical dealloying to partially remove M′ and form partially dealloyed MM′ nanowires having a subsequent molar ratio of M:M′, wherein the subsequent molar ratio of M:M′ is greater than the initial molar ratio of M:M′; and affixing the partially dealloyed MM′ nanowires to a catalyst support.

    Graphene-based semiconductor chip for tunable THz plasmon generation

    公开(公告)号:US10901243B2

    公开(公告)日:2021-01-26

    申请号:US16308383

    申请日:2017-06-09

    Abstract: Methods and apparatus for providing all-optically generated, on-chip propagated and high-efficiency tunable plasmons are described. The plasmon generating apparatus includes a graphene based silicon nitride waveguide (GSiNW) utilizing ‘C+L’ band light sources and detectors that take advantage of the surface 2nd nonlinearity on graphene. The optical generation is accomplished via one or more optical communication lasers through the difference-frequency generation process. The THz frequency and intensity is tunable via an external gate voltage. Using such a device the optical to THz conversion may be made at least an order of magnitude more efficient than prior THz sources, and can be used to make chip-scale room-temperature THz sources, switches, modulators and detectors based on graphene.

    Graphene-Based Semiconductor Chip for Tunable THz Plasmon Generation

    公开(公告)号:US20190137795A1

    公开(公告)日:2019-05-09

    申请号:US16308383

    申请日:2017-06-09

    Abstract: Methods and apparatus for providing all-optically generated, on-chip propagated and high-efficiency tunable plasmons are described. The plasmon generating apparatus includes a graphene based silicon nitride waveguide (GSiNW) utilizing ‘C+L’ band light sources and detectors that take advantage of the surface 2nd nonlinearity on graphene. The optical generation is accomplished via one or more optical communication lasers through the difference-frequency generation process. The THz frequency and intensity is tunable via an external gate voltage. Using such a device the optical to THz conversion may be made at least an order of magnitude more efficient than prior THz sources, and can be used to make chip-scale room-temperature THz sources, switches, modulators and detectors based on graphene.

    THREE-DIMENSIONAL GRAPHENE FRAMEWORK-BASED HIGH-PERFORMANCE SUPERCAPACITORS
    9.
    发明申请
    THREE-DIMENSIONAL GRAPHENE FRAMEWORK-BASED HIGH-PERFORMANCE SUPERCAPACITORS 审中-公开
    三维基于图形框架的高性能超级显示器

    公开(公告)号:US20160284481A1

    公开(公告)日:2016-09-29

    申请号:US15035108

    申请日:2014-07-30

    Abstract: An electrochemical capacitor includes a pair of electrodes and an electrolyte disposed between the pair of electrodes. At least a first electrode of the pair of electrodes includes a graphene framework film, and the graphene framework film includes interconnected graphene sheets with nanopores formed in the graphene sheets.

    Abstract translation: 电化学电容器包括一对电极和设置在该对电极之间的电解质。 所述一对电极中的至少第一电极包括石墨烯框架膜,并且所述石墨烯框架膜包括在所述石墨烯片中形成有纳米孔的互连的石墨烯片。

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