Invention Grant
- Patent Title: High throughput programming system and method for a phase change non-volatile memory device
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Application No.: US14623300Application Date: 2015-02-16
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Publication No.: US09697896B2Publication Date: 2017-07-04
- Inventor: Antonino Conte , Alberto Jose′ Di Martino , Kailash Khairnar
- Applicant: STMICROELECTRONICS S.r.l. , STMICROELECTRONICS PTE LTD
- Applicant Address: IT Agrate Brianza (MB) SG Singapore
- Assignee: STMICROELECTRONICS S.R.L.,STMICROELECTRONICS PTE LTD.
- Current Assignee: STMICROELECTRONICS S.R.L.,STMICROELECTRONICS PTE LTD.
- Current Assignee Address: IT Agrate Brianza (MB) SG Singapore
- Agency: Slater Matsil, LLP
- Priority: ITTO2014A0158 20140226
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C8/04

Abstract:
A phase change non-volatile memory device has a memory array with a plurality of memory cells arranged in rows and columns, a column decoder and a row decoder designed to select columns, and, respectively, rows of the memory array during operations of programming of corresponding memory cells. A control logic, coupled to the column decoder and the row decoder, is designed to execute a sequential programming command, to control the column decoder and row decoder to select one column of the memory array and execute sequential programming operations on a desired block of memory cells belonging to contiguous selected rows of the selected column.
Public/Granted literature
- US20150243356A1 HIGH THROUGHPUT PROGRAMMING SYSTEM AND METHOD FOR A PHASE CHANGE NON-VOLATILE MEMORY DEVICE Public/Granted day:2015-08-27
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