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1.发明授权公开(公告)号：US09697896B2
公开(公告)日：2017-07-04
申请号：US14623300
申请日：2015-02-16
CPC分类号： G11C13/0069 , G11C8/04 , G11C13/0004 , G11C13/0023 , G11C13/0026 , G11C13/0061 , G11C13/0097 , G11C2213/79
摘要： A phase change non-volatile memory device has a memory array with a plurality of memory cells arranged in rows and columns, a column decoder and a row decoder designed to select columns, and, respectively, rows of the memory array during operations of programming of corresponding memory cells. A control logic, coupled to the column decoder and the row decoder, is designed to execute a sequential programming command, to control the column decoder and row decoder to select one column of the memory array and execute sequential programming operations on a desired block of memory cells belonging to contiguous selected rows of the selected column.
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2.发明授权Error correction in memory devices by multiple readings with different references 有权通过不同参考的多个读数对存储器件进行错误校正公开(公告)号：US09430328B2
公开(公告)日：2016-08-30
申请号：US14597845
申请日：2015-01-15
发明人： Antonino Conte , Kailash Khairnar
CPC分类号： G06F11/1068 , G06F11/08 , G06F11/1048 , G11C13/0004 , G11C13/004 , G11C29/52 , G11C2013/0054
摘要： A memory device may include memory cells. The method may include receiving a request of reading a selected data word associated with a selected code word stored with an error correction code, and reading a first code word representing a first version of the selected code word by comparing a state of each selected memory cell with a first reference. The method may include verifying the first code word, setting the selected code word according to the first code word in response to a positive verification, reading at least one second code word representing a second version of the selected code word, verifying the second code word, and setting the selected code word according to the second code word in response to a negative verification of the first code word and to a positive verification of the second code word.
摘要翻译： 存储器件可以包括存储器单元。 该方法可以包括：接收读取与通过纠错码存储的所选码字相关联的所选择的数据字的请求，以及通过比较所选择的存储单元的状态来读取表示所选码字的第一版本的第一码字 第一个参考。 该方法可以包括验证第一代码字，响应于正验证，根据第一代码字设置所选择的代码字，读取表示所选代码字的第二版本的至少一个第二代码字，验证第二代码字 并且响应于第一代码字的否定验证和第二代码字的肯定验证，根据第二代码字设置所选择的代码字。
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3.发明授权Driving stage for phase change non-volatile memory devices provided with auto-calibration feature 有权具有自动校准功能的相变非易失性存储器件的驱动级公开(公告)号：US08942033B2
公开(公告)日：2015-01-27
申请号：US13774181
申请日：2013-02-22
CPC分类号： G11C13/0004 , G11C5/145 , G11C5/147 , G11C13/0038 , G11C13/0069
摘要： A driving stage for a phase change non-volatile memory device may include an output driving unit, which supplies an output driving current during programming of a memory cell, a driving-control unit, which receives an input current and generates a first control signal for controlling supply of the output driving current in such a way that a value thereof has a desired relation with the input current, and a level-shifter element, which carries out a level shift of a voltage of the first control signal for supplying to the output driving unit a second control signal, having a voltage value that is increased with respect to, and is a function of, the first control signal. A calibration unit may carry out an operation of updating of the value of a shift voltage across the level-shifter element, as the value of the input current varies.
摘要翻译： 用于相变非易失性存储器件的驱动级可以包括输出驱动单元，其在存储单元的编程期间提供输出驱动电流;驱动控制单元，其接收输入电流并产生第一控制信号， 控制输出驱动电流的供给，使得其值与输入电流具有期望的关系;电平移动元件，其执行用于提供给输出的第一控制信号的电压的电平偏移 驱动单元具有第二控制信号，其具有相对于第一控制信号增加并且是第一控制信号的函数的电压值。 校准单元可以执行更新跨越电平移位器元件的移位电压的值的操作，因为输入电流的值变化。
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4.发明申请DRIVING STAGE FOR PHASE CHANGE NON-VOLATILE MEMORY DEVICES PROVIDED WITH AUTO-CALIBRATION FEATURE 有权用于相位变化的驱动阶段提供自动校准功能的非易失性存储器件公开(公告)号：US20130229864A1
公开(公告)日：2013-09-05
申请号：US13774181
申请日：2013-02-22
IPC分类号： G11C13/00
CPC分类号： G11C13/0004 , G11C5/145 , G11C5/147 , G11C13/0038 , G11C13/0069
摘要： A driving stage for a phase change non-volatile memory device may include an output driving unit, which supplies an output driving current during programming of a memory cell, a driving-control unit, which receives an input current and generates a first control signal for controlling supply of the output driving current in such a way that a value thereof has a desired relation with the input current, and a level-shifter element, which carries out a level shift of a voltage of the first control signal for supplying to the output driving unit a second control signal, having a voltage value that is increased with respect to, and is a function of, the first control signal. A calibration unit may carry out an operation of updating of the value of a shift voltage across the level-shifter element, as the value of the input current varies.
摘要翻译： 用于相变非易失性存储器件的驱动级可以包括输出驱动单元，其在存储单元的编程期间提供输出驱动电流;驱动控制单元，其接收输入电流并产生第一控制信号， 控制输出驱动电流的供给，使得其值与输入电流具有期望的关系;电平移动元件，其执行用于提供给输出的第一控制信号的电压的电平偏移 驱动单元具有第二控制信号，其具有相对于第一控制信号增加并且是第一控制信号的函数的电压值。 校准单元可以执行更新跨越电平移位器元件的移位电压的值的操作，因为输入电流的值变化。
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