公开(公告)号：US09697896B2

公开(公告)日：2017-07-04

申请号：US14623300

申请日：2015-02-16

Applicant: STMICROELECTRONICS S.r.l. ,  STMICROELECTRONICS PTE LTD

Inventor： Antonino Conte ,  Alberto Jose′ Di Martino ,  Kailash Khairnar

IPC: G11C13/00 ,  G11C8/04

CPC classification number: G11C13/0069 ,  G11C8/04 ,  G11C13/0004 ,  G11C13/0023 ,  G11C13/0026 ,  G11C13/0061 ,  G11C13/0097 ,  G11C2213/79

Abstract: A phase change non-volatile memory device has a memory array with a plurality of memory cells arranged in rows and columns, a column decoder and a row decoder designed to select columns, and, respectively, rows of the memory array during operations of programming of corresponding memory cells. A control logic, coupled to the column decoder and the row decoder, is designed to execute a sequential programming command, to control the column decoder and row decoder to select one column of the memory array and execute sequential programming operations on a desired block of memory cells belonging to contiguous selected rows of the selected column.

公开(公告)号：US11183255B1

公开(公告)日：2021-11-23

申请号：US16925059

申请日：2020-07-09

Applicant: STMicroelectronics S.r.l.

Inventor： Giovanni Matranga ,  Gianbattista Lo Giudice ,  Rosario Roberto Grasso ,  Alberto Jose′ Di Martino

IPC: G11C16/34 ,  G11C16/30 ,  G11C16/14

Abstract: A method for erasing non-volatile memory including applying a first voltage pulse to a non-volatile memory cell to perform a first erase operation of the non-volatile memory cell and determining that a threshold voltage of the non-volatile memory cell is greater than a test voltage. The method further comprising updating a dedicated memory location with a value; and checking the non-volatile memory cell to determine whether the threshold voltage of the non-volatile memory cell is less than an erase-verify voltage to verify that the first erase operation has been performed successfully.