Invention Grant
- Patent Title: Semiconductor component with a multi-layered nucleation body
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Application No.: US15017268Application Date: 2016-02-05
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Publication No.: US09728610B1Publication Date: 2017-08-08
- Inventor: Jianwei Wan , Scott Nelson , Srinivasan Kannan , Peter Kim
- Applicant: Infineon Technologies Americas Corp.
- Applicant Address: US CA El Segundo
- Assignee: Infineon Technologies Americas Corp.
- Current Assignee: Infineon Technologies Americas Corp.
- Current Assignee Address: US CA El Segundo
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L29/732 ; H01L31/109 ; H01L29/205 ; H01L29/20 ; H01L29/778 ; H01L31/0304 ; H01L31/18 ; H01L33/00 ; H01L33/12 ; H01L33/32 ; H01S5/323 ; H01L21/02
Abstract:
There are disclosed herein various implementations of a semiconductor component with a multi-layered nucleation body and method for its fabrication. The semiconductor component includes a substrate, a nucleation body situated over the substrate, and a group III-V semiconductor device situated over the nucleation body. The nucleation body includes a bottom layer formed at a low growth temperature, and a top layer formed at a high growth temperature. The nucleation body also includes an intermediate layer that is formed substantially continuously using a varying intermediate growth temperature.
Public/Granted literature
- US20170229548A1 Semiconductor Component with a Multi-Layered Nucleation Body Public/Granted day:2017-08-10
Information query
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