- Patent Title: Substrate mask patterns, methods of forming a structure on a substrate, methods of forming a square lattice pattern from an oblique lattice pattern, and methods of forming a pattern on a substrate
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Application No.: US14674476Application Date: 2015-03-31
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Publication No.: US09741580B2Publication Date: 2017-08-22
- Inventor: Vishal Sipani , Anton J. deVilliers , William R. Brown , Shane J. Trapp , Ranjan Khurana , Kevin R. Shea
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/308 ; H01L21/027 ; H01L21/033 ; H01L21/311 ; H01L21/22 ; H01L21/266 ; H01L21/32 ; H01L21/768 ; H01L21/02
Abstract:
A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.
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