- Patent Title: MRAM smart bit write algorithm with error correction parity bits
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Application No.: US14827591Application Date: 2015-08-17
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Publication No.: US09747159B2Publication Date: 2017-08-29
- Inventor: Yue-Der Chih , Hung-Chang Yu , Kai-Chun Lin , Chin-Yi Huang , Laun C. Tran
- Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: G11C29/00
- IPC: G11C29/00 ; H03M13/00 ; G06F11/10 ; H03M13/11 ; G06F11/14 ; G11C11/16 ; G11C13/00

Abstract:
Some embodiments relate to a system that includes write circuitry, read circuitry, and comparison circuitry. The write circuitry is configured to attempt to write an expected multi-bit word to a memory location in a memory device. The read circuitry is configured to read an actual multi-bit word from the memory location. The comparison circuitry is configured to compare the actual multi-bit word read from the memory location with the expected multi-bit word which was previously written to the memory location to distinguish between a number of erroneous bits in the actual multi-bit word and a number of correct bits in the actual multi-bit word. The write circuitry is further configured to re-write the number of erroneous bits to the memory location without attempting to re-write the number of correct bits to the memory location.
Public/Granted literature
- US20150355963A1 MRAM SMART BIT WRITE ALGORITHM WITH ERROR CORRECTION PARITY BITS Public/Granted day:2015-12-10
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