Invention Grant
- Patent Title: Chemical-mechanical planarization process using silicon oxynitride anti-reflective layer
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Application No.: US15120323Application Date: 2015-04-30
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Publication No.: US09754795B2Publication Date: 2017-09-05
- Inventor: Qiang Hua , Yaohui Zhou
- Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.
- Applicant Address: CN Jiangsu
- Assignee: CSMC TECHNOLOGIES FAB2 CO., LTD.
- Current Assignee: CSMC TECHNOLOGIES FAB2 CO., LTD.
- Current Assignee Address: CN Jiangsu
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: CN201410180862 20140430
- International Application: PCT/CN2015/078121 WO 20150430
- International Announcement: WO2015/165421 WO 20151105
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/304 ; H01L21/3105 ; H01L21/762 ; H01L21/308 ; H01L21/311

Abstract:
A chemical-mechanical polishing process using a silicon oxynitride anti-reflection layer (S340) includes: (S1) providing a semiconductor wafer comprising a substrate (S310), an oxidation layer (S320) formed on the substrate (S310), a silicon nitride layer (S330) formed on the oxidation layer (S320), an anti-reflection layer (S340) formed on the silicon nitride layer (S330), a trench extending through the anti-reflection layer (S340) and into the substrate (S310), and a first silicon dioxide layer (S350) filling the trench and covering the anti-reflection layer (S340); (S2) polishing the first silicon dioxide layer (S350) until the anti-reflection layer (S340) is exposed; (S3) removing the anti-reflection layer (S340) by dry etching; (S4) forming a second silicon dioxide layer (S360) on the surface of the semiconductor wafer from which the anti-reflection layer (S340) is removed; (S5) polishing the second silicon dioxide layer (S360) until the silicon nitride layer (S330) is exposed; (S6) and, removing the silicon nitride layer (S330).
Public/Granted literature
- US20170069507A1 CHEMICAL-MECHANICAL PLANARIZATION PROCESS USING SILICON OXYNITRIDE ANTIREFLECTIVE LAYER Public/Granted day:2017-03-09
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