公开(公告)号：US09754795B2

公开(公告)日：2017-09-05

申请号：US15120323

申请日：2015-04-30

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Qiang Hua ,  Yaohui Zhou

IPC: H01L21/02 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/762 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/31056 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3081 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76 ,  H01L21/762

Abstract: A chemical-mechanical polishing process using a silicon oxynitride anti-reflection layer (S340) includes: (S1) providing a semiconductor wafer comprising a substrate (S310), an oxidation layer (S320) formed on the substrate (S310), a silicon nitride layer (S330) formed on the oxidation layer (S320), an anti-reflection layer (S340) formed on the silicon nitride layer (S330), a trench extending through the anti-reflection layer (S340) and into the substrate (S310), and a first silicon dioxide layer (S350) filling the trench and covering the anti-reflection layer (S340); (S2) polishing the first silicon dioxide layer (S350) until the anti-reflection layer (S340) is exposed; (S3) removing the anti-reflection layer (S340) by dry etching; (S4) forming a second silicon dioxide layer (S360) on the surface of the semiconductor wafer from which the anti-reflection layer (S340) is removed; (S5) polishing the second silicon dioxide layer (S360) until the silicon nitride layer (S330) is exposed; (S6) and, removing the silicon nitride layer (S330).