Invention Grant
- Patent Title: Method of forming semiconductor device including edge chip and related device
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Application No.: US15148405Application Date: 2016-05-06
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Publication No.: US09761591B2Publication Date: 2017-09-12
- Inventor: Eunjung Kim , Sohyun Park , Bong-Soo Kim , Yoosang Hwang , Dong-Wan Kim , Junghoon Han
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0126949 20150908
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L27/108 ; H01L21/56 ; H01L21/311 ; H01L49/02 ; H01L21/3105 ; H01L21/027

Abstract:
A method of forming a semiconductor device includes forming a molding layer and a supporter layer on a substrate including an etch stop layer, forming a mask layer on the supporter layer, forming a first edge blocking layer on the mask layer, forming a mask pattern by etching the mask layer, forming a hole, forming a lower electrode in the hole, forming a supporter mask layer on the supporter layer, forming a second edge blocking layer on the supporter mask layer, forming a supporter mask pattern by patterning the supporter mask layer, forming a supporter opening passing through the supporter layer, removing the molding layer, forming a capacitor dielectric layer and an upper electrode on the lower electrode, forming an interlayer insulating layer on the upper electrode, and planarizing the interlayer insulating layer. The hole passes through the supporter layer, the molding layer and the etch stop layer.
Public/Granted literature
- US20170069633A1 METHOD OF FORMING SEMICONDUCTOR DEVICE INCLUDING EDGE CHIP AND RELATED DEVICE Public/Granted day:2017-03-09
Information query
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