中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

23 records (took 0.021 seconds)

    Portable device for controlling external device, and audio signal processing method therefor
    1.
    发明授权
    Portable device for controlling external device, and audio signal processing method therefor 有权

    公开(公告)号：US11170767B2

    公开(公告)日：2021-11-09

    申请号：US16325938

    申请日：2017-06-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong-Wan Kim

    IPC: G10L15/20 ,  G10L21/0216 ,  G10L21/0316 ,  G10L15/22 ,  G10K11/178 ,  G10L25/24 ,  H04R1/40 ,  H04R3/00

    Abstract: Disclosed is a portable device for controlling an external device. The portable device comprises: a first microphone, disposed on one surface of a portable device, for receiving an audio signal including user voice uttered by a user; a second microphone, disposed on the other surface of the portable device opposite to the one surface of the portable device, for receiving the audio signal including the user voice; a signal processing unit for processing the audio signal; a communication unit for communicating with an external device; and a processor which determines the user utterance distance between the portable device and the user on the basis of the audio signal received through the first and second microphones, if it is determined that the user utterance distance is a short distance utterance, controls the signal processing unit to process only the audio signal received through the microphone disposed at a relatively further distance from the user from among the first and second microphones, and controls the communication unit to transmit the processed audio signal to the external device.

    Reflective extreme ultraviolet mask
    2.
    发明授权
    Reflective extreme ultraviolet mask 有权

    公开(公告)号：US09658522B2

    公开(公告)日：2017-05-23

    申请号：US14814763

    申请日：2015-07-31

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sang-Hyun Kim ,  Dong-Wan Kim ,  Chang-Min Park ,  In-Sung Kim ,  Dong-Gun Lee

    IPC: G03F1/24

    CPC classification number: G03F1/24

    Abstract: A reflective extreme ultraviolet (EUV) mask includes a mask substrate, a reflecting layer on an upper surface of the mask substrate, and an absorbing layer pattern on an upper surface of the reflecting layer, the absorbing layer pattern having an exposing region and a peripheral region, and the absorbing layer pattern including a grating pattern in the peripheral region to reduce reflectivity of light incident on the peripheral region.

    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    4.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权

    公开(公告)号：US20230039205A1

    公开(公告)日：2023-02-09

    申请号：US17723747

    申请日：2022-04-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyeon-Woo Jang ,  Dong-Wan Kim ,  Keonhee Park ,  Dong-sik Park ,  Joonsuk Park ,  Jihoon Chang

    IPC: H01L27/108

    Abstract: Disclosed are semiconductor memory devices and their fabrication methods. The method comprises providing a substrate including a cell array region and a boundary region, forming a device isolation layer that defines active sections on an upper portion of the substrate on the cell array region, forming an intermediate layer on the substrate on the boundary region, forming on the substrate an electrode layer that covers the intermediate layer on the boundary region, forming a capping layer on the electrode layer, forming an additional capping pattern including providing a first step difference to the capping layer on the boundary region, and allowing the additional capping pattern, the capping layer, and the electrode layer to proceed an etching process to form bit lines that run across the active sections. During the etching process, the electrode layer is simultaneously exposed on the cell array region and the boundary region.

    Semiconductor devices having through electrodes and methods for fabricating the same
    5.
    发明授权
    Semiconductor devices having through electrodes and methods for fabricating the same 有权

    公开(公告)号：US11469157B2

    公开(公告)日：2022-10-11

    申请号：US17152012

    申请日：2021-01-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Wan Kim ,  Jung-Hoon Han ,  Dong-Sik Park

    IPC: H01L23/48 ,  H01L23/538 ,  H01L21/768

    Abstract: The semiconductor device includes a substrate including an integrated circuit and a contact that are electrically connected to each other, an insulation layer covering the substrate and including metal lines, and a through electrode electrically connected to the integrated circuit. The insulation layer includes an interlayer dielectric layer on the substrate and an intermetal dielectric layer on the interlayer dielectric layer. The metal lines include a first metal line in the interlayer dielectric layer and electrically connected to the contact, and a plurality of second metal lines in the intermetal dielectric layer and electrically connected to the first metal line and the through electrode. The through electrode includes a top surface higher than a top surface of the contact.

    Semiconductor devices having through electrodes and methods for fabricating the same
    6.
    发明授权
    Semiconductor devices having through electrodes and methods for fabricating the same 有权

    公开(公告)号：US10340204B2

    公开(公告)日：2019-07-02

    申请号：US15443259

    申请日：2017-02-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Wan Kim ,  Jung-Hoon Han ,  Dong-Sik Park

    IPC: H01L23/48 ,  H01L23/538 ,  H01L21/768

    Abstract: The semiconductor device includes a substrate including an integrated circuit and a contact that are electrically connected to each other, an insulation layer covering the substrate and including metal lines, and a through electrode electrically connected to the integrated circuit. The insulation layer includes an interlayer dielectric layer on the substrate and an intermetal dielectric layer on the interlayer dielectric layer. The metal lines include a first metal line in the interlayer dielectric layer and electrically connected to the contact, and a plurality of second metal lines in the intermetal dielectric layer and electrically connected to the first metal line and the through electrode. The through electrode includes a top surface higher than a top surface of the contact.

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200091100A1

    公开(公告)日：2020-03-19

    申请号：US16418036

    申请日：2019-05-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jung-Hoon Han ,  Dong-Wan Kim ,  Dongho Kim ,  Jaewon Seo

    IPC: H01L23/00 ,  H01L21/66 ,  H01L21/67

    Abstract: A semiconductor device includes a semiconductor substrate including a chip region and an edge region around the chip region, a lower insulating layer on the semiconductor substrate, a chip pad on the lower insulating layer on the chip region, an upper insulating layer provided on the lower insulating layer to cover the chip pad, the upper and different insulating layers including different materials, and a redistribution chip pad on the chip region and connected to the chip pad. The upper insulating layer includes a first portion on the chip region having a first thickness, a second portion on the edge region having a second thickness, and a third portion on the edge region, the third portion extending from the second portion, spaced from the first portion, and having a decreasing thickness away from the second portion. The second thickness is smaller than the first thickness.

Patent Agency Ranking