- 专利标题: Optoelectronic semiconductor chip encapsulated with an ALD layer and corresponding method for production
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申请号: US14760454申请日: 2014-01-14
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公开(公告)号: US09761770B2公开(公告)日: 2017-09-12
- 发明人: Johann Eibl , Sebastian Taeger , Lutz Höppel , Karl Engl , Stefanie Rammelsberger , Markus Maute , Michael Huber , Rainer Hartmann , Georg Hartung
- 申请人: OSRAM Opto Semiconductors GmbH
- 申请人地址: DE Regensburg
- 专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人地址: DE Regensburg
- 代理机构: Slater Matsil, LLP
- 优先权: DE102013100818 20130128
- 国际申请: PCT/EP2014/050574 WO 20140114
- 国际公布: WO2014/114524 WO 20140731
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L33/54 ; H01L33/44 ; H01L33/60 ; H01L33/62 ; H01L21/02 ; H01L33/52 ; H01L33/40
摘要:
An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.
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