A memory apparatus and a memory device are provided. The memory apparatus includes a memory device including a plurality of memory cells and a driving circuit configured to control the memory cells; wherein each of the memory cells includes a memory layer where a magnetization direction is changeable by a current, a magnetic fixed layer having a fixed magnetization, an intermediate layer including a non-magnetic material provided between the memory layer and the magnetic fixed layer, a top electrode provided over the memory layer, a bottom electrode provided over the magnetic fixed layer; wherein the current is configured to flow in a lamination direction between the top electrode and the bottom electrode.