Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US14957623Application Date: 2015-12-03
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Publication No.: US09773887B2Publication Date: 2017-09-26
- Inventor: Ying-Chiao Wang , Chao-Hung Lin , Ssu-I Fu , Jyh-Shyang Jenq , Li-Wei Feng , Yu-Hsiang Hung
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICORELECTRONICS CORP.
- Current Assignee: UNITED MICORELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201510749346 20151106
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/033 ; H01L21/3105 ; H01L21/311 ; H01L21/32 ; H01L29/78
Abstract:
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon, a first spacer around the gate structure, and a contact etch stop layer (CESL) adjacent to the first spacer; forming a cap layer on the gate structure, the first spacer, and the CESL; and removing part of the cap layer for forming a second spacer adjacent to the CESL.
Public/Granted literature
- US20170133479A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-05-11
Information query
IPC分类:
