Invention Grant
- Patent Title: Laterally-doped MEMS resonator
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Application No.: US14569538Application Date: 2014-12-12
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Publication No.: US09774313B1Publication Date: 2017-09-26
- Inventor: Charles I. Grosjean , Ginel C. Hill , Paul M. Hagelin , Renata Melamud Berger , Aaron Partridge , Markus Lutz
- Applicant: SiTime Corporation
- Applicant Address: US CA Santa Clara
- Assignee: SiTime Corporation
- Current Assignee: SiTime Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Charles Shemwell
- Main IPC: H02N1/00
- IPC: H02N1/00 ; H03H9/24 ; H03H3/007

Abstract:
A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.
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