公开(公告)号：US20240056054A1

公开(公告)日：2024-02-15

申请号：US18449102

申请日：2023-08-14

Applicant: SiTime Corporation

Inventor： Charles I. Grosjean ,  Ginel C. Hill ,  Paul M. Hagelin ,  Renata Melamud Berger ,  Aaron Patridge ,  Markus Lutz

IPC: H03H9/24 ,  H03H3/007 ,  H03H9/10 ,  B81C1/00

CPC classification number: H03H9/2457 ,  H03H3/0072 ,  H03H3/0076 ,  H03H9/1057 ,  B81C1/0069

Abstract: A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.

公开(公告)号：US11685650B2

公开(公告)日：2023-06-27

申请号：US16983141

申请日：2020-08-03

Applicant: SiTime Corporation

Inventor： Aaron Partridge ,  Markus Lutz ,  Pavan Gupta

IPC: H01L23/051 ,  B81C1/00 ,  H01L41/113 ,  B81B7/00

CPC classification number: B81C1/00277 ,  B81B7/007 ,  B81B7/0035 ,  B81B7/0058 ,  B81C1/00269 ,  B81C1/00301 ,  H01L23/051 ,  H01L41/1136 ,  B81B2201/0271 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C2201/0171 ,  B81C2203/031 ,  B81C2203/036 ,  B81C2203/037 ,  B81C2203/038 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.

公开(公告)号：US11370656B2

公开(公告)日：2022-06-28

申请号：US17143119

申请日：2021-01-06

Applicant: SiTime Corporation

Inventor： Pavan Gupta ,  Aaron Partridge ,  Markus Lutz

IPC: B81B7/00 ,  B81C1/00 ,  H01L41/113 ,  H01L23/34 ,  H01L23/498 ,  H01L23/31

Abstract: A low-profile packaging structure for a microelectromechanical-system (MEMS) resonator system includes an electrical lead having internal and external electrical contact surfaces at respective first and second heights within a cross-sectional profile of the packaging structure and a die-mounting surface at an intermediate height between the first and second heights. A resonator-control chip is mounted to the die-mounting surface of the electrical lead such that at least a portion of the resonator-control chip is disposed between the first and second heights and wire-bonded to the internal electrical contact surface of the electrical lead. A MEMS resonator chip is mounted to the resonator-control chip in a stacked die configuration and the MEMS resonator chip, resonator-control chip and internal electrical contact and die-mounting surfaces of the electrical lead are enclosed within a package enclosure that exposes the external electrical contact surface of the electrical lead at an external surface of the packaging structure.

公开(公告)号：US20210221678A1

公开(公告)日：2021-07-22

申请号：US16983141

申请日：2020-08-03

Applicant: SiTime Corporation

Inventor： Aaron Partridge ,  Markus Lutz ,  Pavan Gupta

IPC: B81C1/00 ,  H01L41/113 ,  H01L23/051 ,  B81B7/00

Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.

公开(公告)号：US10476477B1

公开(公告)日：2019-11-12

申请号：US15697417

申请日：2017-09-06

Applicant: SiTime Corporation

Inventor： Charles I. Grosjean ,  Ginel C. Hill ,  Paul M. Hagelin ,  Renata Melamud Berger ,  Aaron Partridge ,  Markus Lutz

IPC: H02N1/00 ,  H03H9/24 ,  H03H3/007

Abstract: A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.

公开(公告)号：US10099917B2

公开(公告)日：2018-10-16

申请号：US15686480

申请日：2017-08-25

Applicant: SiTime Corporation

Inventor： Aaron Partridge ,  Markus Lutz ,  Pavan Gupta

IPC: H01L23/051 ,  B81C1/00 ,  B81B7/00 ,  H01L41/113

Abstract: After forming a microelectromechanical-system (MEMS) resonator within a silicon-on-insulator (SOI) wafer, a complementary metal oxide semiconductor (CMOS) cover wafer is bonded to the SOI wafer via one or more eutectic solder bonds that implement respective paths of electrical conductivity between the two wafers and hermetically seal the MEMS resonator within a chamber.

公开(公告)号：US09695036B1

公开(公告)日：2017-07-04

申请号：US13759013

申请日：2013-02-04

Applicant: SiTime Corporation

Inventor： Renata Melamud Berger ,  Ginel C. Hill ,  Paul M. Hagelin ,  Charles I. Grosjean ,  Aaron Partridge ,  Joseph C. Doll ,  Markus Lutz

IPC: H01L31/058 ,  H03H9/00 ,  B81B3/00 ,  H03H9/02 ,  H03H9/24

CPC classification number: B81B3/0024 ,  H03H9/02448 ,  H03H9/2405 ,  H03H9/2457

Abstract: The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 1019 cm−3, and preferably between 1019 cm−3 and 1021 cm−3.

公开(公告)号：US11897757B1

公开(公告)日：2024-02-13

申请号：US17384535

申请日：2021-07-23

Applicant: SiTime Corporation

Inventor： Renata M. Berger ,  Ginel C. Hill ,  Paul M. Hagelin ,  Charles I. Grosjean ,  Aaron Partridge ,  Joseph C. Doll ,  Markus Lutz

IPC: B81B3/00 ,  H03H9/02 ,  H03H9/24

CPC classification number: B81B3/0024 ,  H03H9/02448 ,  H03H9/2405

Abstract: The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 1019 cm−3, and preferably between 1019 cm−3 and 1021 cm−3.

公开(公告)号：US20240002218A1

公开(公告)日：2024-01-04

申请号：US18130837

申请日：2023-04-04

Applicant: SiTime Corporation

Inventor： Aaron Partridge ,  Markus Lutz ,  Pavan Gupta

IPC: B81C1/00 ,  H01L23/051 ,  H10N30/30 ,  B81B7/00

CPC classification number: B81C1/00277 ,  B81C1/00301 ,  H01L23/051 ,  H10N30/306 ,  B81B7/007 ,  B81B7/0058 ,  B81C1/00269 ,  B81B7/0035 ,  H01L2924/0002 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C2201/0171 ,  B81C2203/031 ,  B81C2203/036 ,  B81C2203/037 ,  B81C2203/038 ,  B81B2201/0271

Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.

公开(公告)号：US11807518B1

公开(公告)日：2023-11-07

申请号：US15627049

申请日：2017-06-19

Applicant: SiTime Corporation

Inventor： Renata M. Berger ,  Ginel C. Hill ,  Paul M. Hagelin ,  Charles I. Grosjean ,  Aaron Partridge ,  Joseph C. Doll ,  Markus Lutz

IPC: B81B3/00 ,  H03H9/02 ,  H03H9/24

CPC classification number: B81B3/0024 ,  H03H9/02448 ,  H03H9/2405

Abstract: The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 1019 cm-3, and preferably between 1019 cm-3 and 1021 cm-3.