公开(公告)号：US11770112B1

公开(公告)日：2023-09-26

申请号：US17197378

申请日：2021-03-10

Applicant: SiTime Corporation

Inventor： Charles I. Grosjean ,  Ginel C. Hill ,  Paul M. Hagelin ,  Renata Melamud Berger ,  Aaron Partridge ,  Markus Lutz

IPC: H03H9/24 ,  H03H3/007 ,  B81C1/00 ,  H03H9/10

CPC classification number: H03H9/2457 ,  B81C1/0069 ,  H03H3/0072 ,  H03H3/0076 ,  H03H9/1057

Abstract: A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.

公开(公告)号：US09774313B1

公开(公告)日：2017-09-26

申请号：US14569538

申请日：2014-12-12

Applicant: SiTime Corporation

Inventor： Charles I. Grosjean ,  Ginel C. Hill ,  Paul M. Hagelin ,  Renata Melamud Berger ,  Aaron Partridge ,  Markus Lutz

IPC: H02N1/00 ,  H03H9/24 ,  H03H3/007

CPC classification number: H03H9/2457 ,  B81C1/0069 ,  H03H3/0072 ,  H03H3/0076 ,  H03H9/1057

Abstract: A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.

公开(公告)号：US08916407B1

公开(公告)日：2014-12-23

申请号：US13837407

申请日：2013-03-15

Applicant: SiTime Corporation

Inventor： Charles I Grosjean ,  Ginel Hill ,  Paul M. Hagelin ,  Renata Melamud Berger ,  Aaron Partridge ,  Markus Lutz

IPC: H01L21/00 ,  B81C1/00

CPC classification number: H03H9/2457 ,  B81C1/0069 ,  H03H3/0072 ,  H03H3/0076 ,  H03H9/1057

Abstract: A method of manufacturing a micromachined resonator having a moveable member comprising forming the moveable member from a material having a first concentration of dopants of a first impurity type, depositing a dopant carrier layer on or over at least a portion of the moveable member, wherein the dopant carrier layer includes one or more dopants of the first impurity type, transferring at least a portion of the one or more dopants from the dopant carrier layer to the moveable member, wherein, in response, the concentration of dopants of the first impurity type in the moveable member increases (for example, to greater than 1019 cm−3, and preferably between 1019 cm−3 and 1021 cm−3). The method further includes removing the dopant carrier layer and may include providing an encapsulation structure over the moveable member of the micromachined resonator.

Abstract translation: 一种制造具有可移动构件的微加工谐振器的方法，包括由具有第一杂质类型的第一掺杂浓度的材料形成可移动构件，在该可动构件的至少一部分上或之上沉积掺杂剂载体层，其中， 掺杂剂载体层包括一种或多种第一杂质类型的掺杂剂，将一种或多种掺杂剂的至少一部分从掺杂剂载体层转移到可移动构件，其中，作为响应，第一杂质类型的掺杂剂的浓度 可移动构件增加（例如，大于1019cm-3，优选在1019cm-3和1021cm-3之间）。 该方法还包括去除掺杂剂载体层，并且可以包括在微加工谐振器的可移动构件之上提供封装结构。

公开(公告)号：US12095447B1

公开(公告)日：2024-09-17

申请号：US16591717

申请日：2019-10-03

Applicant: SiTime Corporation

Inventor： Charles I. Grosjean ,  Ginel C. Hill ,  Paul M. Hagelin ,  Renata Melamud Berger ,  Aaron Partridge ,  Markus Lutz

IPC: H03H9/24 ,  B81C1/00 ,  H03H3/00 ,  H03H3/007 ,  H03H9/10

CPC classification number: H03H9/2457 ,  B81C1/0069 ,  H03H3/0072 ,  H03H3/0076 ,  H03H9/1057 ,  B81C2201/0164 ,  B81C2201/0171

Abstract: A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.

公开(公告)号：US20240056054A1

公开(公告)日：2024-02-15

申请号：US18449102

申请日：2023-08-14

Applicant: SiTime Corporation

Inventor： Charles I. Grosjean ,  Ginel C. Hill ,  Paul M. Hagelin ,  Renata Melamud Berger ,  Aaron Patridge ,  Markus Lutz

IPC: H03H9/24 ,  H03H3/007 ,  H03H9/10 ,  B81C1/00

CPC classification number: H03H9/2457 ,  H03H3/0072 ,  H03H3/0076 ,  H03H9/1057 ,  B81C1/0069

Abstract: A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.

公开(公告)号：US10476477B1

公开(公告)日：2019-11-12

申请号：US15697417

申请日：2017-09-06

Applicant: SiTime Corporation

Inventor： Charles I. Grosjean ,  Ginel C. Hill ,  Paul M. Hagelin ,  Renata Melamud Berger ,  Aaron Partridge ,  Markus Lutz

IPC: H02N1/00 ,  H03H9/24 ,  H03H3/007

Abstract: A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.

公开(公告)号：US09695036B1

公开(公告)日：2017-07-04

申请号：US13759013

申请日：2013-02-04

Applicant: SiTime Corporation

Inventor： Renata Melamud Berger ,  Ginel C. Hill ,  Paul M. Hagelin ,  Charles I. Grosjean ,  Aaron Partridge ,  Joseph C. Doll ,  Markus Lutz

IPC: H01L31/058 ,  H03H9/00 ,  B81B3/00 ,  H03H9/02 ,  H03H9/24

CPC classification number: B81B3/0024 ,  H03H9/02448 ,  H03H9/2405 ,  H03H9/2457

Abstract: The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 1019 cm−3, and preferably between 1019 cm−3 and 1021 cm−3.