- 专利标题： Semiconductor device, method for manufacturing the same, and rinsing liquid
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申请号： US14413554申请日： 2013-07-12
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公开(公告)号： US09780008B2公开(公告)日： 2017-10-03
- 发明人: Shoko Ono , Yasuhisa Kayaba , Hirofumi Tanaka , Kazuo Kohmura , Tsuneji Suzuki
- 申请人： MITSUI CHEMICALS, INC.
- 申请人地址： JP Tokyo
- 专利权人： MITSUI CHEMICALS, INC.
- 当前专利权人： MITSUI CHEMICALS, INC.
- 当前专利权人地址： JP Tokyo
- 代理机构： Buchanan, Ingersoll & Rooney PC
- 优先权： JP2012-158979 20120717; JP2013-039944 20130228
- 国际申请： PCT/JP2013/069225 WO 20130712
- 国际公布： WO2014/013956 WO 20140123
- 主分类号： H01L23/29
- IPC分类号： H01L23/29 ; H01L21/02 ; H01L21/3105 ; H01L21/768 ; H01L21/311 ; C09K13/00 ; H01L21/56 ; H01L23/31 ; H01L23/532 ; C09D179/02 ; C08G73/02
摘要：
A method for manufacturing a semiconductor device including: a process of applying a sealing composition for a semiconductor to a semiconductor substrate, to form a sealing layer for a semiconductor on at least the bottom face and the side face of a recess portion of an interlayer insulating layer, the sealing composition including a polymer having a cationic functional group and a weight average molecular weight of from 2,000 to 1,000,000, each of the content of sodium and the content of potassium in the sealing composition being 10 ppb by mass or less on an elemental basis; and a process of subjecting a surface of the semiconductor substrate at a side at which the sealing layer has been formed to heat treatment of from 200° C. to 425° C., to remove at least a part of the sealing layer.
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