- 专利标题： Transistor with trapeziod shaped carbon namotubes
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申请号： US15287214申请日： 2016-10-06
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公开(公告)号： US09786851B2公开(公告)日： 2017-10-10
- 发明人: Qing Cao , Kangguo Cheng , Zhengwen Li , Fei Liu , Zhen Zhang
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexnian
- 主分类号： H01L29/775
- IPC分类号： H01L29/775 ; H01L21/336 ; H01L51/05 ; H01L27/28 ; H01L51/00 ; B82Y30/00 ; B82Y10/00 ; B82Y40/00
摘要：
A transistor device includes an array of fin structures arranged on a substrate, each of the fin structures being vertically alternating stacks of a first isoelectric point material having a first isoelectric point and a second isoelectric point material having a second isoelectric point that is different than the first isoelectric point; one or more carbon nanotubes (CNTs) suspended between the fin structures and contacting a side surface of the second isoelectric point material in the fin structures; a gate wrapped around the array of CNTs; and source and drain contacts arranged over the fin structures; wherein each of the fin structures have a trapezoid shape or parallel sides that are oriented about 90° with respect to the substrate.
公开/授权文献
- US20170025614A1 SELF-ALIGNED VERTICAL CNT ARRAY TRANSISTOR 公开/授权日：2017-01-26
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